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NSVJ6904DSB6T1G

Onsemi

NSVJ6904DSB6T1G by Onsemi

NSVJ6904DSB6T1G by Onsemi is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. It features a max power dissipation of 0.7W, operating temperature range of -55 to 150°C, and peak reflow temperature of 260°C. This small outline transistor has 6 terminals in a gull wing package shape suitable for surface mount configurations.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,046 parts In-Stock

1+ parts

$1.370

100+ parts

$0.570

1k+ parts

$0.406

10k+ parts

$0.358

8,046

$1.370

$0.570

$0.406

$0.358

DigiKey

USA . 4,938 parts In-Stock

1+ parts

$1.370

100+ parts

$0.574

1k+ parts

$0.408

10k+ parts

$0.317

4,938

$1.370

$0.574

$0.408

$0.317

Newark

USA . 3,461 parts In-Stock

1+ parts

$1.500

100+ parts

$0.700

1k+ parts

$0.536

10k+ parts

-

3,461

$1.500

$0.700

$0.536

-

Farnell

UK . 3,461 parts In-Stock

1+ parts

-

100+ parts

$0.440

1k+ parts

$0.360

10k+ parts

-

3,461

-

$0.440

$0.360

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Element14

Singapore . 3,461 parts In-Stock

1+ parts

-

100+ parts

$0.790

1k+ parts

-

10k+ parts

-

3,461

-

$0.790

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Flip Electronics (Authorized)

USA . 2,870 parts In-Stock

1+ parts

-

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-

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2,870

-

-

-

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Chip1Stop

Japan . 203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.698

10k+ parts

-

203

-

-

$0.698

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.780

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.780

-

-

-

Digiode

USA . 1,680 parts In-Stock

1+ parts

$0.833

100+ parts

-

1k+ parts

-

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1,680

$0.833

-

-

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Flip Electronics

USA . 2,870 parts In-Stock

1+ parts

-

100+ parts

-

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2,870

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Vyrian

USA . 2,221 parts In-Stock

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-

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2,221

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Rapid Electronics

USA . 203 parts In-Stock

1+ parts

-

100+ parts

$0.550

1k+ parts

-

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203

-

$0.550

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 4,848 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

4,848

$0.090

-

$0.061

$0.061

Continental Prestige Electronics

USA . 3,629 parts In-Stock

1+ parts

$0.494

100+ parts

-

1k+ parts

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3,629

$0.494

-

-

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Corohmni

South Africa . 447 parts In-Stock

1+ parts

$0.550

100+ parts

-

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447

$0.550

-

-

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Semicontronic

India . 2,459 parts In-Stock

1+ parts

$0.590

100+ parts

$0.575

1k+ parts

$0.572

10k+ parts

-

2,459

$0.590

$0.575

$0.572

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Ampacity Inc.

Singapore . 2,004 parts In-Stock

1+ parts

$0.590

100+ parts

-

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2,004

$0.590

-

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Aztec Data Supply Inc.

USA . 2,107 parts In-Stock

1+ parts

$0.640

100+ parts

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2,107

$0.640

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Argo Parts USA

USA . 3,360 parts In-Stock

1+ parts

$0.780

100+ parts

-

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3,360

$0.780

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Corphita

USA . 478 parts In-Stock

1+ parts

$0.789

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478

$0.789

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Kulean Microsystems

USA . 8,171 parts In-Stock

1+ parts

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8,171

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TANS Electronics

Latvia . 6,314 parts In-Stock

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6,314

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SupplyDigital Components

Austria . 5,387 parts In-Stock

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5,387

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Problanco Electronics

Mexico . 279 parts In-Stock

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279

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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46

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Overview

Enhance your electronic designs with the NSVJ6904DSB6T1G by Onsemi, a top-quality N-CHANNEL FET transistor perfect for amplifier applications. Onsemi, known for their reliable components, delivers a product that guarantees superior performance and durability. With its common source configuration and small outline package style, this transistor offers easy integration and efficient operation. Trust Onsemi to provide you with cutting-edge technology that will take your projects to the next level. Upgrade your circuits today with the NSVJ6904DSB6T1G and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and higher electron mobility, making them efficient for amplifying signals.

Configuration: COMMON SOURCE, 2 ELEMENTS

Common source configuration allows for high input impedance and gain, while having 2 elements provides redundancy and reliability.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and signal amplification.

Surface Mount: YES

Ease of installation and smaller footprint, making it suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NSVJ6904DSB6T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.3 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.7 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NSVJ6904DSB6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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