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NRVHPRS1GFA

Onsemi

NRVHPRS1GFA by Onsemi

NRVHPRS1GFA by Onsemi is a single rectifier diode with a max reverse recovery time of 0.25 us and max output current of 0.8 A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a peak reflow temperature of 260 °C.

Median Price

$1.340

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,710 parts In-Stock

1+ parts

$1.340

100+ parts

$0.364

1k+ parts

$0.212

10k+ parts

-

2,710

$1.340

$0.364

$0.212

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,308 parts In-Stock

1+ parts

$1.273

100+ parts

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2,308

$1.273

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Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 4,138 parts In-Stock

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4,138

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 3,628 parts In-Stock

1+ parts

$0.220

100+ parts

$0.140

1k+ parts

$0.110

10k+ parts

-

3,628

$0.220

$0.140

$0.110

-

Corphita

USA . 1,577 parts In-Stock

1+ parts

$1.206

100+ parts

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1,577

$1.206

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Corohmni

South Africa . 350 parts In-Stock

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$1.340

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350

$1.340

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AZTECH Wire

Italy . 406 parts In-Stock

1+ parts

$12.940

100+ parts

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406

$12.940

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QUARKTWIN TECHNOLOGY LTD

USA . 20,914 parts In-Stock

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20,914

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Perfect Parts

USA . 20,406 parts In-Stock

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20,406

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SupplyDigital Components

Austria . 8,037 parts In-Stock

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8,037

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Problanco Electronics

Mexico . 4,291 parts In-Stock

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4,291

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TANS Electronics

Latvia . 3,364 parts In-Stock

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3,364

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Kulean Microsystems

USA . 2,752 parts In-Stock

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2,752

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GreenTree Electronics

Israel . 2,710 parts In-Stock

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2,710

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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Overview

Discover the NRVHPRS1GFA by Onsemi, a high-quality diode & rectifier that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for efficiency applications with a maximum reverse recovery time of 0.25 us and a reverse test voltage of 400V. With a maximum forward voltage of 1.3V and an output current of 0.8A, this diode offers unmatched value and benefits to customers looking for top-notch performance in their applications. Choose the NRVHPRS1GFA for superior quality and optimal functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode lightweight, durable, and resistant to external factors such as moisture and temperature changes.

Config: SINGLE

The single configuration simplifies the design and reduces complexity in the application, making it easier to integrate into a circuit.

Surface Mount: YES

The surface mount capability allows for easy and reliable soldering onto a PCB, saving space and enabling a more compact design.

Maximum Reverse Recovery Time: 0.25 us

The low reverse recovery time ensures fast switching performance, ideal for applications requiring high efficiency and low loss.

Maximum Reverse Current: 5 uA

The low reverse current minimizes power dissipation and improves overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular package shape offers easy handling and placement on the PCB, optimizing space utilization.

Reverse Test Voltage: 400 V

The high reverse test voltage makes the diode suitable for high voltage applications, ensuring reliable performance under varying voltage conditions.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chances of error during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for applications where board real estate is limited.

Application: EFFICIENCY

Designed for efficiency, this diode is well-suited for applications where power loss needs to be minimized, leading to energy savings.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in harsh environments and high temperature applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the diode to operate in cold conditions without compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and conductivity, while the annealing process enhances the durability of the terminal.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and enables polarity-independent connection.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time reduces the risk of thermal damage during assembly, ensuring the reliability of the diode.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering during assembly, ensuring a strong bond between the diode and the PCB.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making it suitable for automotive applications where stringent standards are required.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting AC to DC and offers low forward voltage drop for efficient rectification.

Maximum Forward Voltage (VF): 1.3 V

The low maximum forward voltage drop ensures minimal power loss during rectification, contributing to high efficiency.

Maximum Output Current: 0.8 A

With a maximum output current of 0.8 A, this diode can handle moderate current levels, making it suitable for a wide range of applications.

Terminal Form: FLAT

The flat terminal form provides a stable and secure connection, ensuring consistent performance over time.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage rating allows the diode to handle voltage spikes without breakdown, ensuring long-term reliability.

Maximum Non Repetitive Peak Forward Current: 30 A

The high non-repetitive peak forward current rating provides robust protection against short-term current surges, making it suitable for demanding applications.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency, low forward voltage drop, and fast switching speeds, making it ideal for a variety of applications.

Technical Specifications

Diodes & Rectifiers NRVHPRS1GFA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.25 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHPRS1GFA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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