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NRVHPRS1BFA

Onsemi

NRVHPRS1BFA by Onsemi

NRVHPRS1BFA by Onsemi is a single rectifier diode with 0.15 us reverse recovery time and 5 uA reverse current. It operates b/w -55 to 150 °C, with a max output current of 0.8 A. Ideal for efficiency applications, it has a peak reflow temperature of 260 °C and meets AEC-Q101 standard.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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AZTECH Wire

Italy . 204 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Overview

Discover the NRVHPRS1BFA by Onsemi, a high-quality rectifier diode with a single configuration and surface mount capability. Manufactured by Onsemi, this product offers reliability and efficiency, making it ideal for various applications. With a maximum reverse recovery time of 0.15 us and a maximum reverse current of 5 uA, customers can trust in the performance and durability of this diode. Whether used in automotive, industrial, or consumer electronics, the NRVHPRS1BFA delivers value and benefits that exceed expectations. Experience the advantages of Onsemi's cutting-edge technology with this versatile and dependable diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the diode, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.15 us

The fast reverse recovery time ensures efficient switching and reduces energy losses in the diode, contributing to overall system efficiency.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop of 1.3 V minimizes power losses and improves the efficiency of the diode in conducting current.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand demanding operating conditions and maintain performance reliability.

Technical Specifications

Diodes & Rectifiers NRVHPRS1BFA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.15 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHPRS1BFA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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