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NRVHP8H200MFDT1G

Onsemi

NRVHP8H200MFDT1G by Onsemi

NRVHP8H200MFDT1G by Onsemi is a rectifier diode with 200V peak reverse voltage, 0.03us reverse recovery time, and 0.5uA reverse current. It is used in automotive applications due to AEC-Q101 standard compliance and can handle up to 4A output current.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 49,000 parts In-Stock

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Vyrian

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.054

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$0.044

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350

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AZTECH Wire

Italy . 583 parts In-Stock

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Problanco Electronics

Mexico . 7,390 parts In-Stock

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SupplyDigital Components

Austria . 7,260 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 5,510 parts In-Stock

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TANS Electronics

Latvia . 2,150 parts In-Stock

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Corphita

USA . 654 parts In-Stock

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Corohmni

South Africa . 282 parts In-Stock

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UHIMA Technologies

Türkiye . 13 parts In-Stock

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Overview

Discover the power of the NRVHP8H200MFDT1G diode rectifier by Onsemi, a top-notch manufacturer known for superior quality and reliability. This small outline package with matte tin terminal finish offers lightning-fast reverse recovery time and low reverse current, making it ideal for a variety of applications. From automotive electronics to industrial machinery, this diode is a game-changer in terms of efficiency and performance. Trust Onsemi to deliver cutting-edge technology that brings value and benefits to your projects. Choose the NRVHP8H200MFDT1G for all your rectification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides excellent insulation and protection for the diode, ensuring long-term reliability and durability.

Maximum Reverse Recovery Time: 0.03 us

The low reverse recovery time ensures efficient and fast switching, making the diode suitable for high-frequency applications.

Maximum Forward Voltage (VF): 0.91 V

Low forward voltage drop reduces power losses and improves overall efficiency of the circuit where the diode is used.

Maximum Output Current: 4 A

High output current capability allows the diode to handle larger loads and currents without getting damaged.

Maximum Repetitive Peak Reverse Voltage: 200 V

The diode can withstand high reverse voltages, making it suitable for applications requiring higher voltage handling capability.

Technical Specifications

Diodes & Rectifiers NRVHP8H200MFDT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.91 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.03 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVHP8H200MFDT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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