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NP2600GARLG

Onsemi

NP2600GARLG by Onsemi

NP2600GARLG by Onsemi is a single silicon surge protector with 2 wire terminals. It has a max DC off-state voltage of 220V and a max breakdown voltage of 300V. This thyristor surge protector is UL recognized and commonly used for isolating case connections in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,615 parts In-Stock

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Digiode

USA . 1,127 parts In-Stock

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Kulean Microsystems

USA . 4,506 parts In-Stock

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SupplyDigital Components

Austria . 2,481 parts In-Stock

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Corphita

USA . 1,288 parts In-Stock

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TANS Electronics

Latvia . 1,121 parts In-Stock

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Problanco Electronics

Mexico . 905 parts In-Stock

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905

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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Overview

Enhance your electronic devices with the NP2600GARLG by Onsemi, a top-of-the-line Silicon Surge Protector designed to safeguard against power surges and voltage spikes. Manufactured by industry leader Onsemi, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this Surge Protector ensures optimal performance and protection for your valuable equipment. Invest in peace of mind with the NP2600GARLG, providing superior value and benefits that will keep your electronics safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the surge protector lightweight and durable, ensuring it can withstand various environmental conditions.

Configuration: SINGLE

A single configuration allows for simple installation and maintenance of the surge protector, making it user-friendly.

Package Shape: ROUND

The round shape of the package provides easy integration into different electronic devices or systems.

Terminal Form: WIRE

The wire terminal form enables easy connection to the circuit, reducing installation time and effort.

No. of Terminals: 2

Having 2 terminals allows for a secure and stable connection, enhancing the overall effectiveness of the surge protector.

Package Style (Meter): LONG FORM

The long form package style provides more surface area for heat dissipation, ensuring the surge protector operates at optimal temperatures.

Maximum DC Off-state Voltage: 220 V

The 220 V maximum DC off-state voltage ensures reliable protection against surges within that range, safeguarding connected devices.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizing a thyristor surge protector enhances the efficiency and speed at which the surge protector responds to voltage spikes, protecting connected equipment effectively.

Terminal Position: AXIAL

The axial terminal position allows for easy and straightforward installation within a circuit, ensuring proper alignment and connectivity.

Case Connection: ISOLATED

The isolated case connection prevents potential short circuits and interference, ensuring the surge protector operates safely and efficiently.

Maximum Holding Current: 150000 mA

With a maximum holding current of 150000 mA, the surge protector can handle high levels of current during surges, protecting equipment from damage.

Maximum Breakdown Voltage: 300 V

The 300 V maximum breakdown voltage ensures that the surge protector can effectively divert excess voltage away from connected devices, maintaining their integrity.

Reference Standard: UL RECOGNIZED

Being UL recognized, this surge protector meets strict safety and performance standards, providing assurance of quality and reliability.

Technical Specifications

Silicon Surge Protectors NP2600GARLG attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

300 V

Case Connection:

Configuration:

Maximum DC Off-state Voltage:

220 V

Maximum Holding Current:

150000 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

NP2600GARLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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