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NP2600GBRLG

Onsemi

NP2600GBRLG by Onsemi

NP2600GBRLG by Onsemi is a single silicon surge protector with 2 wire terminals. It has a max DC off-state voltage of 220V and a max breakdown voltage of 300V. This thyristor surge protector is UL recognized, ideal for applications requiring isolated case connection and high holding current up to 150000mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,070 parts In-Stock

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2,070

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Digiode

USA . 236 parts In-Stock

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236

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Kulean Microsystems

USA . 6,267 parts In-Stock

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6,267

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Problanco Electronics

Mexico . 4,395 parts In-Stock

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4,395

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TANS Electronics

Latvia . 2,273 parts In-Stock

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SupplyDigital Components

Austria . 1,831 parts In-Stock

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Corphita

USA . 585 parts In-Stock

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585

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UHIMA Technologies

Türkiye . 513 parts In-Stock

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513

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Corohmni

South Africa . 290 parts In-Stock

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Overview

Upgrade your surge protection with the NP2600GBRLG by Onsemi. Manufactured by a trusted industry leader, this silicon surge protector offers superior quality and reliability. Ideal for a variety of applications, this product provides peace of mind against power surges, protecting your valuable electronic devices. Say goodbye to worries about voltage spikes and enjoy uninterrupted performance with the NP2600GBRLG. Trust in Onsemi's expertise and invest in the best protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the surge protector lightweight and durable, ensuring long-lasting performance.

Configuration: SINGLE

The single configuration simplifies installation and setup of the surge protector, making it user-friendly and convenient.

Package Shape: ROUND

The round shape of the package makes it easy to mount the surge protector in various locations, providing flexibility in installation.

Terminal Form: WIRE

The wire terminal form allows for easy connection and ensures a secure and reliable electrical connection.

No. of Terminals: 2

The surge protector having 2 terminals simplifies the wiring process, making it more manageable for installation.

Package Style (Meter): LONG FORM

The long form package style provides ample space for the components, enhancing the surge protector's performance and reliability.

Maximum DC Off-state Voltage: 220 V

The high maximum DC off-state voltage of 220V ensures protection against surges and spikes, safeguarding connected electronics.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector is known for its fast response time and high surge handling capacity, effectively protecting devices from transient voltage spikes.

Terminal Position: AXIAL

The axial terminal position simplifies the connection process and ensures a secure fit, enhancing the surge protector's overall effectiveness.

Case Connection: ISOLATED

The isolated case connection prevents interference and ensures proper grounding, improving the surge protector's performance and reliability.

Maximum Holding Current: 150000 mA

With a high maximum holding current of 150,000 mA, the surge protector can effectively handle transient surges without compromising performance.

Maximum Breakdown Voltage: 300 V

The high maximum breakdown voltage of 300V provides an additional layer of protection, ensuring the surge protector can handle voltage fluctuations effectively.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that the surge protector meets stringent safety and performance standards, providing peace of mind to users about its reliability and quality.

Technical Specifications

Silicon Surge Protectors NP2600GBRLG attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

300 V

Case Connection:

Configuration:

Maximum DC Off-state Voltage:

220 V

Maximum Holding Current:

150000 mA

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

NP2600GBRLG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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