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TISP4300H3BJR

Texas Instruments

TISP4300H3BJR by Texas Instruments

TISP4300H3BJR by Texas Instruments is a single silicon surge protector with 60A peak current, 230V DC voltage, and 150°C max temp. Ideal for protecting circuits from surges in applications like power supplies and telecommunications due to its thyristor surge protection design.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Prism Electronics

USA . 89,692 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 9,000 parts In-Stock

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Vyrian

USA . 7,367 parts In-Stock

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Digiode

USA . 3,343 parts In-Stock

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3,343

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Cyclops Electronics Ltd

UK . 2,801 parts In-Stock

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Extreme Components

USA . 2,510 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,366 parts In-Stock

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ComSIT USA

USA . 2,366 parts In-Stock

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Parana Technologies

USA . 1,804 parts In-Stock

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$3.591

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$4.109

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$3.591

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DigiPath Technology Company

USA . 843 parts In-Stock

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$3.954

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$3.638

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843

$3.954

$3.638

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ChromeModa Solutions

Germany . 3,479 parts In-Stock

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$4.035

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$3.309

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IDEA Electronic Components Group

UK . 1,866 parts In-Stock

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$4.035

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$3.632

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One Stop Electronics

USA . 159 parts In-Stock

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$13.100

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AZTECH Wire

Italy . 443 parts In-Stock

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$14.379

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Perfect Parts

USA . 100,455 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 2,801 parts In-Stock

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Corphita

USA . 2,118 parts In-Stock

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Overview

Protect your electronics with the TISP4300H3BJR by Texas Instruments, a top-quality Silicon Surge Protector that guarantees peace of mind. With Texas Instruments' reputation for excellence in manufacturing, this single configuration device offers reliable protection against power surges and voltage spikes. Ideal for a variety of applications, this compact and durable product ensures that your valuable equipment stays safe and operational. Trust Texas Instruments to deliver superior performance and unmatched quality in surge protection technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against physical damage, making this surge protector a reliable choice for long-term use.

Configuration: SINGLE

The single configuration makes installation simple and straightforward, reducing complexity and potential points of failure.

Non Repetitive Peak On-state Current: 60 A

With a high peak current handling capability, this surge protector can effectively protect against surges and spikes in the power supply.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation in a variety of applications, saving space and simplifying the mounting process.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and space-efficient design, making it suitable for installations where space is limited.

Terminal Form: C BEND

The C bend terminal form ensures a secure and reliable connection, reducing the risk of disconnection or poor contact that could compromise the surge protector's performance.

No. of Terminals: 2

Having two terminals allows for a simple and straightforward connection, making installation quick and easy.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables a compact design, ideal for applications where space is limited or where a sleek and minimalist appearance is desired.

Maximum DC Off-state Voltage: 230 V

The high maximum off-state voltage rating ensures reliable protection against voltage spikes and surges, making this surge protector suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this surge protector can function effectively even in demanding environments with elevated temperatures.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type provides fast and effective protection against surges, ensuring the safety of connected devices and systems.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature rating allows this surge protector to function reliably even in cold environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and wiring, allowing for easy integration into various systems and setups.

Maximum Holding Current: 600 mA

With a high maximum holding current, this surge protector can effectively suppress transient surges and maintain protection over an extended period.

Maximum Breakdown Voltage: 300 V

The high maximum breakdown voltage ensures reliable protection against high voltage surges, making this surge protector a dependable choice for sensitive electronics.

Reference Standard: UL RECOGNIZED

Being UL recognized certifies that this surge protector meets industry standards for safety and performance, providing assurance of quality and reliability.

Technical Specifications

Silicon Surge Protectors TISP4300H3BJR attributes and parameters. Explore more Silicon Surge Protectors devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

300 V

Configuration:

Maximum DC Off-state Voltage:

230 V

Maximum Holding Current:

600 mA

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Non Repetitive Peak On-state Current:

60 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

TISP4300H3BJR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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