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NLVVHC1GT32DFT2G

Onsemi

NLVVHC1GT32DFT2G by Onsemi

NLVVHC1GT32DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay at 5V. It operates in temperature range -55 to 125 °C and has AEC-Q100 screening level. Ideal for applications requiring fast signal processing in automotive electronics.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 55 parts In-Stock

1+ parts

$0.320

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$0.143

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$0.048

55

$0.320

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$0.048

Distributors (In-Stock)

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Digiode

USA . 1,281 parts In-Stock

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$0.304

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Vyrian

USA . 5,332 parts In-Stock

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Vigor

Singapore . 218 parts In-Stock

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$0.130

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Corphita

USA . 1,228 parts In-Stock

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$0.288

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Corohmni

South Africa . 351 parts In-Stock

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Component Stockers USA

USA . 58 parts In-Stock

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$0.350

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58

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Microchip USA

USA . 4,977 parts In-Stock

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$0.819

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,666 parts In-Stock

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TANS Electronics

Latvia . 3,696 parts In-Stock

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Problanco Electronics

Mexico . 1,987 parts In-Stock

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Kulean Microsystems

USA . 1,751 parts In-Stock

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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Overview

Discover the unparalleled quality and performance of the NLVVHC1GT32DFT2G logic gate by Onsemi. Designed with precision and reliability in mind, this product offers fast propagation delay, excellent temperature tolerance, and a wide range of applications. From automotive to industrial electronics, this logic gate is a versatile solution for various projects. With Onsemi's trusted reputation for innovation and excellence, you can trust that you are getting a top-notch product that delivers value, efficiency, and seamless integration into your designs. Elevate your projects with the NLVVHC1GT32DFT2G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and resistance to external factors, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures quick processing of signals and high performance in signal transmission.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly process.

Nominal Supply Voltage / Vsup (V): 5

Compatible with a standard supply voltage of 5V, making it versatile and easily compatible with various systems.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, suitable for challenging environmental conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, ensuring efficient operation and data integrity.

Technical Specifications

Logic Gates NLVVHC1GT32DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1GT32DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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