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NLU2G16CMUTCG

Onsemi

NLU2G16CMUTCG by Onsemi

NLU2G16CMUTCG by Onsemi is a CMOS Logic Gate with 14.5ns Propagation Delay, suitable for military applications. It operates at 1.8/5V power supplies, has 6 terminals in a small outline package, and can handle up to 50pF load capacitance.

Median Price

$0.510

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 989 parts In-Stock

1+ parts

$0.510

100+ parts

$0.257

1k+ parts

$0.153

10k+ parts

$0.106

989

$0.510

$0.257

$0.153

$0.106

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 636 parts In-Stock

1+ parts

$0.484

100+ parts

-

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636

$0.484

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Flip Electronics

USA . 81,000 parts In-Stock

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81,000

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Vyrian

USA . 5,596 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 663 parts In-Stock

1+ parts

$0.459

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663

$0.459

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Corohmni

South Africa . 450 parts In-Stock

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$0.510

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450

$0.510

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$25.036

100+ parts

$22.783

1k+ parts

$20.530

10k+ parts

-

750

$25.036

$22.783

$20.530

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QUARKTWIN TECHNOLOGY LTD

USA . 17,195 parts In-Stock

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17,195

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SupplyDigital Components

Austria . 6,000 parts In-Stock

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Microchip USA

USA . 4,383 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,830 parts In-Stock

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Kulean Microsystems

USA . 2,803 parts In-Stock

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2,803

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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822

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Problanco Electronics

Mexico . 321 parts In-Stock

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Overview

Experience superior quality and reliability with the NLU2G16CMUTCG logic gates from Onsemi. Designed to meet the highest industry standards, this product offers unparalleled performance and efficiency. Ideal for a wide range of applications, this square-shaped package with a small outline and very thin profile is perfect for use in military-grade technologies. With a nominal supply voltage of 5V and low propagation delay, customers can trust in the exceptional value and benefits that this product brings to their projects. Trust Onsemi for all your logic gate needs and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material for the package body provides durability and protection to the internal components of the logic gates.

Propagation Delay At Nominal Supply: 14.5 ns

The low propagation delay ensures fast and efficient operation of the logic gates, making them suitable for time-sensitive applications.

Surface Mount: YES

Being surface mountable enables easy and convenient PCB assembly, saving time and effort during the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and allows for easy integration into existing electronic circuits.

Load Capacitance (CL): 50 pF

Having a load capacitance of 50pF allows the logic gates to drive a moderate amount of capacitive load, making them versatile for a variety of applications.

Maximum Seated Height: 0.55 mm

The compact design with a maximum seated height of 0.55 mm enables the logic gates to be used in space-constrained environments without sacrificing performance.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NLU2G16CMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

14.5 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLU2G16CMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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