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NLU2G07AMX1TCG

Onsemi

NLU2G07AMX1TCG by Onsemi

NLU2G07AMX1TCG by Onsemi is a logic gate with 2 functions, 10 ns propagation delay, and 5V nominal voltage. Ideal for military applications due to its CMOS technology, -55 to 125 °C operating temperature range, and small outline package style.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 71,435 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

71,435

-

$0.092

$0.077

$0.068

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.083

1k+ parts

$0.065

10k+ parts

$0.061

3,000

-

$0.083

$0.065

$0.061

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.123

1k+ parts

$0.095

10k+ parts

-

3,000

-

$0.123

$0.095

-

Distributors (In-Stock)

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Digiode

USA . 757 parts In-Stock

1+ parts

$0.072

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-

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757

$0.072

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Vyrian

USA . 5,208 parts In-Stock

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5,208

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Distributors (Availability)

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Corphita

USA . 776 parts In-Stock

1+ parts

$0.068

100+ parts

-

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776

$0.068

-

-

-

Vigor

Singapore . 317 parts In-Stock

1+ parts

$0.070

100+ parts

-

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317

$0.070

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Corohmni

South Africa . 487 parts In-Stock

1+ parts

$0.076

100+ parts

-

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487

$0.076

-

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AZTECH Wire

Italy . 623 parts In-Stock

1+ parts

$13.050

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623

$13.050

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Continental Prestige Electronics

USA . 71,434 parts In-Stock

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$0.066

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71,434

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$0.066

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Kepictronics

USA . 5,499 parts In-Stock

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5,499

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TANS Electronics

Latvia . 4,525 parts In-Stock

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4,525

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SupplyDigital Components

Austria . 3,222 parts In-Stock

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3,222

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Kulean Microsystems

USA . 1,242 parts In-Stock

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1,242

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Problanco Electronics

Mexico . 695 parts In-Stock

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695

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UHIMA Technologies

Türkiye . 604 parts In-Stock

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604

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Microchip USA

USA . 276 parts In-Stock

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276

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Overview

Experience the superior quality and reliability of the NLU2G07AMX1TCG logic gate by Onsemi. Manufactured with precision and expertise, this product offers exceptional performance in a wide range of applications. With fast propagation delay and open-drain output characteristics, this logic gate is designed to deliver optimal functionality and efficiency. Trust Onsemi for cutting-edge technology that exceeds expectations and provides unmatched value for your projects. Elevate your designs with the NLU2G07AMX1TCG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 10 ns

With a fast propagation delay, this product can quickly process signals, making it suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation and assembly easier and more efficient in modern electronic devices.

Load Capacitance (CL): 50 pF

The low load capacitance allows for efficient signal transmission and reduces energy consumption.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this product compatible with a wide range of electronic systems.

Output Characteristics: OPEN-DRAIN

The open-drain output allows for flexibility in connecting to other components, making it versatile for different circuit designs.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable.

Technical Specifications

Logic Gates NLU2G07AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU2G07AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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