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NLU2G07AMUTCG

Onsemi

NLU2G07AMUTCG by Onsemi

NLU2G07AMUTCG by Onsemi is a Logic Gates IC with 10ns Propagation Delay, 5V Nominal Voltage, and 50pF Load Capacitance. It is used in military-grade applications due to its CMOS technology, open-drain output characteristics, and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,904 parts In-Stock

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Vyrian

USA . 1,550 parts In-Stock

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Kulean Microsystems

USA . 2,533 parts In-Stock

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Corphita

USA . 2,215 parts In-Stock

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Problanco Electronics

Mexico . 1,751 parts In-Stock

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SupplyDigital Components

Austria . 1,644 parts In-Stock

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TANS Electronics

Latvia . 583 parts In-Stock

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UHIMA Technologies

Türkiye . 553 parts In-Stock

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Corohmni

South Africa . 206 parts In-Stock

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Overview

Discover the NLU2G07AMUTCG by Onsemi, a top-quality logic gate that offers unrivaled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product provides customers with seamless functionality and peace of mind. Ideal for a wide range of applications, this logic gate ensures fast propagation delay and efficient power supplies, making it a valuable addition to any project. Experience the benefits of precision engineering and cutting-edge technology with the NLU2G07AMUTCG - your go-to solution for exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

It provides a durable and lightweight housing for the logic gates, making them suitable for a variety of applications.

Propagation Delay At Nominal Supply: 10 ns

With a fast propagation delay, these logic gates can process signals quickly and efficiently.

Surface Mount: YES

Surface mount technology allows for easy and compact integration of the logic gates onto PCBs, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes these logic gates compatible with many existing systems and circuits.

Output Characteristics: OPEN-DRAIN

The open-drain output allows for easy interfacing with other components and flexibility in circuit design.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates efficient and reliable.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions and have a wide range of applications.

Technical Specifications

Logic Gates NLU2G07AMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU2G07AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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