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NL37WZ14MU3TCG

Onsemi

NL37WZ14MU3TCG by Onsemi

NL37WZ14MU3TCG by Onsemi is a CMOS Logic Gate with 3 functions, 7.5ns propagation delay at 2.3V supply voltage. Ideal for military applications due to its Schmitt Trigger technology and wide operating temperature range from -55 °C to 125°C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,687 parts In-Stock

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Digiode

USA . 1,217 parts In-Stock

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Component Stockers USA

USA . 9,416 parts In-Stock

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AZTECH Wire

Italy . 372 parts In-Stock

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TANS Electronics

Latvia . 7,795 parts In-Stock

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SupplyDigital Components

Austria . 4,681 parts In-Stock

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Problanco Electronics

Mexico . 3,083 parts In-Stock

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Kulean Microsystems

USA . 2,103 parts In-Stock

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Corphita

USA . 1,222 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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Corohmni

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Microchip USA

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Overview

Experience the superior quality and reliability of Onsemi with the NL37WZ14MU3TCG Logic Gates. Designed for efficiency and precision, this product offers a range of applications in various industries. With a focus on performance and durability, Onsemi ensures that every customer receives exceptional value and benefits from their investment. Trust in Onsemi for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the logic gates, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 7.5 ns

With a low propagation delay at nominal supply, this product can provide quick response times for signals passing through the logic gates, making it suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy installation and integration onto circuit boards, saving time and effort during assembly.

No. of Functions: 3

Having multiple functions within a single component provides versatility and flexibility in circuit design, making this product a cost-effective choice for various applications.

Nominal Supply Voltage / Vsup (V): 2.3

The nominal supply voltage of 2.3V is within a common range for many electronic devices, making this product compatible with a wide range of systems.

Load Capacitance (CL): 15 pF

The low load capacitance helps reduce signal distortion and improve signal integrity, making this product suitable for high-frequency applications.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options for interfacing with other components, allowing for complex circuit configurations.

Maximum I (ol): 24 Amp

The high maximum output current rating of 24 Amps allows this product to drive heavy loads, making it suitable for power-intensive applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this product can withstand elevated temperatures without compromising performance, making it suitable for harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures that this product can function effectively in cold environments, expanding its range of potential applications.

Terminal Form: NO LEAD

The no-lead terminal form allows for easy soldering and installation onto circuit boards, simplifying the assembly process.

Technical Specifications

Logic Gates NL37WZ14MU3TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, ULTRA THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

7.5 ns

Propagation Delay (tpd):

8 ns

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1 mm

Trade Compliance

NL37WZ14MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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