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NL37WZ06

Onsemi

NL37WZ06 by Onsemi

NL37WZ06 by Onsemi is a Logic Gates IC with 3 functions, 8 terminals, and 3.7ns propagation delay at 3.3V. It operates b/w -55 to 125 °C, suitable for MILITARY applications with load capacitance of 50pF and max ICC of 0.01mA.

Median Price

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Lifecycle Status

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< 1k

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Digiode

USA . 761 parts In-Stock

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TANS Electronics

Latvia . 8,078 parts In-Stock

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SupplyDigital Components

Austria . 6,343 parts In-Stock

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Kulean Microsystems

USA . 4,235 parts In-Stock

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Problanco Electronics

Mexico . 1,402 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Overview

The NL37WZ06 by Onsemi is a top-notch logic gate that combines high-quality manufacturing with reliable performance. With fast propagation delay and low power consumption, this versatile component is perfect for a wide range of applications. Whether you're in the military, automotive, or industrial sector, this product offers exceptional value and benefits. Trust Onsemi to deliver the best in logic gates, and experience the advantages of the NL37WZ06 for yourself.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 3.7 ns

Low propagation delay ensures fast operation and efficient performance.

No. of Functions: 3

Having multiple functions in one component increases flexibility and reduces the need for additional components.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with standard supply voltages, making it easy to integrate into existing systems.

Load Capacitance (CL): 50 pF

Suitable for driving moderate load capacitance, ensuring reliable operation.

No. of Terminals: 8

A moderate number of terminals allows for easy connection and integration with other components.

Maximum I (ol): 24 Amp

High output current capability allows for driving larger loads without the need for external amplification.

Propagation Delay (tpd): 7.2 ns

Although not the fastest, the propagation delay is still low enough for most applications.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration provides flexibility in connecting to different types of circuits.

Temperature Grade: MILITARY

Suitable for use in rugged environments and high-temperature conditions.

Maximum Power Supply Current (ICC): 0.01 mA

Low power consumption leads to energy efficiency and longer battery life in portable devices.

Technical Specifications

Logic Gates NL37WZ06 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Packing Method:

TR

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.7 ns

Propagation Delay (tpd):

7.2 ns

Schmitt Trigger:

NO

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Temperature Grade:

Trade Compliance

NL37WZ06 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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