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NL37WZ06MU3TCG

Onsemi

NL37WZ06MU3TCG by Onsemi

NL37WZ06MU3TCG by Onsemi is a Logic Gate with 3.7ns Propagation Delay, 3 functions, and 50pF Load Capacitance. Ideal for military applications due to its CMOS technology, -55 to 125 °C operating temperature range, and small outline package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,292 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 7,027 parts In-Stock

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TANS Electronics

Latvia . 4,062 parts In-Stock

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Kulean Microsystems

USA . 2,428 parts In-Stock

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Corphita

USA . 1,531 parts In-Stock

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SupplyDigital Components

Austria . 1,213 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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UHIMA Technologies

Türkiye . 136 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the NL37WZ06MU3TCG by Onsemi, a leading manufacturer in the industry. Perfect for various applications, this Logic Gates device offers exceptional value with its fast propagation delay, high output current, and wide operating temperature range. With a compact design and surface mount compatibility, this product is ideal for demanding projects where performance and efficiency are crucial. Trust Onsemi to deliver excellence with every component, providing you with the competitive edge you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability of the product.

Propagation Delay At Nominal Supply: 3.7 ns

Low propagation delay ensures fast operation and responsiveness.

Surface Mount: YES

Surface mount capability makes it easy to integrate into various electronic designs.

No. of Functions: 3

Having multiple functions in one component saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common supply voltage making it compatible with many systems.

Load Capacitance (CL): 50 pF

Designed to handle a typical load capacitance for efficient performance.

No. of Terminals: 8

Sufficient terminals for connections and flexibility in circuit layout.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

Compact size and thin profile make it suitable for space-constrained applications.

Maximum I (ol): 24 Amp

High output current capability for driving external components or loads.

Propagation Delay (tpd): 7.2 ns

Additional information on propagation delay for accurate timing in circuit design.

Maximum Operating Temperature: 125 °C

Operates reliably in high-temperature environments.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other components.

Minimum Operating Temperature: -55 °C

Operates reliably in low-temperature environments.

Terminal Position: DUAL

Dual terminal positioning for flexible PCB mounting options.

Maximum Seated Height: 0.55 mm

Low profile design for space-saving and compact applications.

Width: 1 mm

Thin width for easy placement on PCBs with limited space.

Minimum Supply Voltage (Vsup): 1.65 V

Can operate at low supply voltages for energy efficiency.

Length: 1.45 mm

Compact length for fitting into tight spaces in electronic designs.

Temperature Grade: MILITARY

Meets military-grade specifications for reliability and ruggedness.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

Lead-free terminal form for environmental friendliness and RoHS compliance.

Packing Method: TR

TR packing method for convenient handling and storage.

Terminal Pitch: 0.35 mm

Fine terminal pitch for high-density mounting and compact PCB layouts.

Maximum Supply Voltage (Vsup): 5.5 V

Can handle higher supply voltages for versatility in different applications.

Maximum Power Supply Current (ICC): 0.01 mA

Low power supply current for energy-efficient operation.

Technical Specifications

Logic Gates NL37WZ06MU3TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.7 ns

Propagation Delay (tpd):

7.2 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NL37WZ06MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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