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NL27WZ07DTT1

Onsemi

NL27WZ07DTT1 by Onsemi

NL27WZ07DTT1 by Onsemi is a Logic Gates IC with 2 functions, 4.8 ns propagation delay, and 1.8V nominal voltage. Ideal for applications requiring fast signal processing in military-grade environments due to its CMOS technology and open-drain output characteristics.

Median Price

$0.252

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 869 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.209

10k+ parts

$0.187

869

-

$0.252

$0.209

$0.187

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,850 parts In-Stock

1+ parts

$0.197

100+ parts

-

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1,850

$0.197

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Vyrian

USA . 5,326 parts In-Stock

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5,326

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Elcom Components

USA . 2,872 parts In-Stock

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2,872

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,425 parts In-Stock

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Distributors (Availability)

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Vigor

Singapore . 940 parts In-Stock

1+ parts

$0.140

100+ parts

-

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940

$0.140

-

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Corphita

USA . 1,907 parts In-Stock

1+ parts

$0.186

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1,907

$0.186

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Corohmni

South Africa . 305 parts In-Stock

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$0.207

100+ parts

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305

$0.207

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AZTECH Wire

Italy . 81 parts In-Stock

1+ parts

$11.970

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-

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81

$11.970

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$37.343

100+ parts

$33.982

1k+ parts

$30.621

10k+ parts

-

2,000

$37.343

$33.982

$30.621

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Kulean Microsystems

USA . 7,552 parts In-Stock

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TANS Electronics

Latvia . 5,713 parts In-Stock

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Problanco Electronics

Mexico . 2,060 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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SupplyDigital Components

Austria . 963 parts In-Stock

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963

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UHIMA Technologies

Türkiye . 901 parts In-Stock

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901

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Continental Prestige Electronics

USA . 869 parts In-Stock

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$0.122

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869

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$0.122

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Microchip USA

USA . 404 parts In-Stock

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404

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Overview

Experience the exceptional quality and reliability of Onsemi with the NL27WZ07DTT1 Logic Gates. Perfect for a variety of applications, this product offers fast propagation delay and open-drain output characteristics. With a small outline and thin profile package style, this logic gate is designed for easy surface mounting. Trust Onsemi's innovative technology to deliver high performance and value, making it the ideal choice for your next project. Elevate your design with the NL27WZ07DTT1 Logic Gates today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and enhances the product's resistance to external elements, making it a reliable choice.

Propagation Delay At Nominal Supply: 4.8 ns

With a low propagation delay at nominal supply, this product offers fast signal processing and efficient operation in various applications.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB, making it suitable for compact electronic designs.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V ensures energy efficiency and minimizes power consumption, making it a cost-effective solution.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this product is suitable for use in industrial environments and applications that require reliable performance under extreme conditions.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics allow for easy interfacing with other components, enhancing the versatility and compatibility of this product.

Technology: CMOS

Utilizing CMOS technology, this product offers low power consumption, high noise immunity, and fast switching speeds, making it a robust and efficient choice for logic gate applications.

Technical Specifications

Logic Gates NL27WZ07DTT1 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

27WZ

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.5 mm

Trade Compliance

NL27WZ07DTT1 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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