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NL17SZ07EDFT2G

Onsemi

NL17SZ07EDFT2G by Onsemi

NL17SZ07EDFT2G by Onsemi is a CMOS Logic Gate with 5 terminals, operating b/w -55 to 125 °C. It has a propagation delay of 12 ns and supports a supply voltage range from 1.65V to 5.5V. Ideal for military-grade applications requiring open-drain output characteristics in compact designs.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 78,000 parts In-Stock

1+ parts

$0.026

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$0.025

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$0.022

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78,000

$0.026

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$0.022

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Distributors (In-Stock)

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Digiode

USA . 1,486 parts In-Stock

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$0.025

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$0.025

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Flip Electronics

USA . 21,000 parts In-Stock

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Vyrian

USA . 2,805 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,690 parts In-Stock

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$0.023

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Corohmni

South Africa . 401 parts In-Stock

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$0.026

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401

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Vigor

Singapore . 335 parts In-Stock

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$0.040

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335

$0.040

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Component Stockers USA

USA . 396,300 parts In-Stock

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$0.310

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AZTECH Wire

Italy . 825 parts In-Stock

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$19.490

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A-Z Elektronik GmbH

Germany . 7,443 parts In-Stock

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TANS Electronics

Latvia . 7,305 parts In-Stock

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Problanco Electronics

Mexico . 6,551 parts In-Stock

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SupplyDigital Components

Austria . 6,075 parts In-Stock

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Kulean Microsystems

USA . 6,028 parts In-Stock

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Microchip USA

USA . 5,168 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,210 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 160 parts In-Stock

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Overview

Discover the power of seamless integration with the NL17SZ07EDFT2G by Onsemi. Crafted with precision by a leading manufacturer, this logic gate offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides exceptional value and performance. Unlock new possibilities with its advanced features and robust design. Trust in Onsemi to deliver cutting-edge solutions for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gate, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, making it energy efficient and suitable for a variety of applications.

Propagation Delay (tpd): 12 ns

Provides fast response times for signal processing, improving overall performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in a wide range of environments.

Output Characteristics: OPEN-DRAIN

Offers flexibility in connecting to other components, allowing for versatile circuit design.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing efficiency and reliability.

Technical Specifications

Logic Gates NL17SZ07EDFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

12 ns

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL17SZ07EDFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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