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NL17SG125MU1TCG

Onsemi

NL17SG125MU1TCG by Onsemi

NL17SG125MU1TCG by Onsemi is a 3-STATE bus driver with 4.8ns propagation delay, operating at -55 to 125 °C. It has a small outline package with 6 terminals and supports a supply voltage range of 0.9V to 3.6V. Ideal for military-grade applications requiring fast signal transmission in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,635 parts In-Stock

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Digiode

USA . 416 parts In-Stock

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SupplyDigital Components

Austria . 6,692 parts In-Stock

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Kulean Microsystems

USA . 5,551 parts In-Stock

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TANS Electronics

Latvia . 4,345 parts In-Stock

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Problanco Electronics

Mexico . 4,244 parts In-Stock

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Corphita

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Corohmni

South Africa . 153 parts In-Stock

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UHIMA Technologies

Türkiye . 120 parts In-Stock

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Overview

Enhance your electronic designs with the NL17SG125MU1TCG by Onsemi, a top-of-the-line Bus Driver & Transceiver that offers unparalleled quality and reliability. Manufactured by the trusted brand Onsemi, this product boasts a range of applications and benefits for customers seeking high-performance components. With a low propagation delay and true output polarity, this product is ideal for military-grade applications where precision and efficiency are paramount. Upgrade your projects today with the NL17SG125MU1TCG and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for use in various applications.

Propagation Delay At Nominal Supply: 4.8 ns

The low propagation delay ensures fast signal transmission, making the product efficient for time-sensitive operations.

Surface Mount: YES

Being surface mountable allows for easy and secure installation on circuit boards, saving space and simplifying assembly.

Package Size: RECTANGULAR

The rectangular package shape is commonly used and easy to handle, making it compatible with a wide range of equipment and designs.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage is a common standard in many electronic systems, ensuring compatibility and ease of integration.

Load Capacitance (CL): 30 pF

The low load capacitance helps in reducing signal distortion and interference, ensuring reliable data transmission.

No. of Terminals: 6

Having 6 terminals allows for multiple connectivity options and flexibility in circuit design, accommodating various configurations.

Output Characteristics: 3-STATE

The 3-state output allows the bus driver to have high impedance, enabling efficient sharing of a transmission line among multiple devices.

Minimum Operating Temperature: -55 °C

The wide temperature range of -55 °C ensures the product can operate in harsh environmental conditions, making it versatile and reliable.

Maximum Operating Temperature: 125 °C

With a maximum temperature of 125 °C, the product can withstand high heat levels, suitable for industrial and automotive applications.

Technology: CMOS

The CMOS technology used in the product offers low power consumption and high noise immunity, enhancing the overall performance and efficiency.

Technical Specifications

Bus Driver & Transceivers NL17SG125MU1TCG attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

17SG

JESD-30 Code:

R-PDSO-N6

Length:

1.45 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

20 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

19.6 ns

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Width:

1 mm

Trade Compliance

NL17SG125MU1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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