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NGTD17R120F2WP

Onsemi

NGTD17R120F2WP by Onsemi

The Onsemi NGTD17R120F2WP is a single rectifier diode with max reverse current of 1uA and forward voltage of 1.8V. It operates at up to 175 °C, making it suitable for fast recovery applications in electronics requiring a high repetitive peak reverse voltage of 1200V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,038 parts In-Stock

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Vyrian

USA . 723 parts In-Stock

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723

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TANS Electronics

Latvia . 6,092 parts In-Stock

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SupplyDigital Components

Austria . 4,674 parts In-Stock

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Problanco Electronics

Mexico . 2,462 parts In-Stock

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Kulean Microsystems

USA . 2,457 parts In-Stock

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Corphita

USA . 2,369 parts In-Stock

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UHIMA Technologies

Türkiye . 302 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Overview

Unlock the power of fast recovery with the NGTD17R120F2WP by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their diodes and rectifiers. Ideal for applications requiring quick response times, this single-configured, surface mount diode offers a maximum reverse current of 1uA and a maximum operating temperature of 175 °C. With a maximum repetitive peak reverse voltage of 1200V, the NGTD17R120F2WP provides exceptional value and performance to customers looking for efficient and high-performing rectifier diodes.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the design and installation process, making it easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient mounting on printed circuit boards, saving space and increasing overall efficiency.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and improved efficiency in electronic circuits.

Package Shape: SQUARE

Square package shape provides stability and ease of mounting in different orientations, enhancing versatility in product design.

Package Style: UNCASED CHIP

Uncased chip design offers compact size and protection, suitable for applications where space is limited and reliability is crucial.

Application: FAST RECOVERY

Fast recovery time enables quick switching transitions and high-speed operation, beneficial for applications requiring rapid response and performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance in demanding environments with elevated temperatures.

Terminal Position: UPPER

Upper terminal position facilitates easier connections and integration into circuit layouts, enhancing usability and convenience.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting alternating current (AC) to direct current (DC), making it essential in power supply and rectification applications.

Maximum Forward Voltage (VF): 1.8 V

Low maximum forward voltage reduces power losses and improves efficiency in electronic circuits, especially in high current applications.

Terminal Form: NO LEAD

No lead terminal form simplifies assembly and soldering processes, enabling quick and secure connections in various electronic applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage tolerance ensures reliable operation in high voltage applications, providing robust protection and performance.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency, low forward voltage drop, and good temperature stability, making it a versatile choice for various electronic circuits.

Technical Specifications

Diodes & Rectifiers NGTD17R120F2WP attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD17R120F2WP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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