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NGTD13R120F2SWK

Onsemi

NGTD13R120F2SWK by Onsemi

NGTD13R120F2SWK by Onsemi is a single rectifier diode with max reverse current of 1uA and VF of 2.6V. Ideal for fast recovery applications, it operates up to 175 °C with a max repetitive peak reverse voltage of 1200V.

Median Price

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Lifecycle Status

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Vyrian

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USA . 20,273 parts In-Stock

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Kulean Microsystems

USA . 7,829 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Corohmni

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Overview

Discover the NGTD13R120F2SWK by Onsemi, a high-quality rectifier diode that offers fast recovery and reliable performance. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for applications where precision and efficiency are essential. With a maximum reverse current of 1 uA and a maximum repetitive peak reverse voltage of 1200 V, this diode is perfect for a wide range of electronic projects. Experience the value and benefits of the NGTD13R120F2SWK by Onsemi and take your creations to the next level.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to use and install in various applications.

Surface Mount: YES

Being surface mountable increases versatility and compatibility with modern PCB designs.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to handle in manufacturing processes.

Package Style (Meter): UNCASED CHIP

Uncased chip design provides compactness and simplifies mounting on circuit boards.

Application: FAST RECOVERY

Fast recovery diode is suitable for applications where quick switching is required.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows this diode to be used in a wide range of environments.

Terminal Position: UPPER

Upper terminal position makes it convenient for connecting in circuits.

Diode Type: RECTIFIER DIODE

Rectifier diode is essential in converting AC to DC with minimal losses.

Maximum Forward Voltage (VF): 2.6 V

Low maximum forward voltage drop ensures energy efficiency in forward conduction.

Terminal Form: NO LEAD

No lead terminal form eliminates the need for extra soldering and simplifies assembly.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum reverse voltage rating allows for use in high voltage applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and stability in various operating conditions.

Technical Specifications

Diodes & Rectifiers NGTD13R120F2SWK attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JESD-30 Code:

R-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD13R120F2SWK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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