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NGTD15R65F2SWK

Onsemi

NGTD15R65F2SWK by Onsemi

NGTD15R65F2SWK by Onsemi is a single diode with max reverse current of 1uA and max repetitive peak reverse voltage of 650V. Ideal for fast recovery applications, it operates up to 175 °C with a max forward voltage of 2.9V. This surface-mount square diode in unencased chip package suits various rectifier needs.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 5,859 parts In-Stock

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Corphita

USA . 2,430 parts In-Stock

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TANS Electronics

Latvia . 1,187 parts In-Stock

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UHIMA Technologies

Türkiye . 683 parts In-Stock

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SupplyDigital Components

Austria . 365 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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Kulean Microsystems

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Overview

Experience the power of cutting-edge technology with the NGTD15R65F2SWK by Onsemi. As a leader in the industry, Onsemi delivers top-quality diodes and rectifiers that are perfect for fast recovery applications. With a maximum reverse current of 1 uA and a maximum repetitive peak reverse voltage of 650 V, this single-config surface mount diode offers unmatched performance and reliability. Say goodbye to worries about overheating or breakdowns, as this diode can operate at temperatures up to 175 °C. Trust Onsemi to provide you with the best diode solutions for your electronic needs.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and makes the product easy to use.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures minimal power loss in the reverse direction, improving efficiency.

Package Shape: SQUARE

Square package shape facilitates easier placement and alignment in the circuit.

Package Style (Meter): UNCASED CHIP

Uncased chip packaging offers a compact and lightweight design, suitable for space-constrained applications.

Application: FAST RECOVERY

Fast recovery diodes are ideal for high-frequency applications where rapid switching is required.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding environments.

Terminal Position: UPPER

Upper terminal position simplifies connection and ensures proper alignment during installation.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) to direct current (DC) in power supply applications.

Maximum Forward Voltage (VF): 2.9 V

Low maximum forward voltage drop results in minimal power loss and efficient energy conversion.

Terminal Form: NO LEAD

No-lead terminal form provides a compact and space-saving design for easier integration into circuits.

Maximum Repetitive Peak Reverse Voltage: 650 V

High maximum repetitive peak reverse voltage makes the diode suitable for high-voltage applications with reliable performance.

Diode Element Material: SILICON

Silicon diodes offer high efficiency, low leakage current, and good thermal stability for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NGTD15R65F2SWK attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.9 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD15R65F2SWK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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