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NGTD13R120F2WP

Onsemi

NGTD13R120F2WP by Onsemi

The Onsemi NGTD13R120F2WP is a single rectifier diode with a max repetitive peak reverse voltage of 1200V. It has a fast recovery application, operating up to 175 °C, and features a max forward voltage of 2.6V. This surface-mount diode in rectangular shape is ideal for high-voltage applications requiring low reverse current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,919 parts In-Stock

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Vyrian

USA . 671 parts In-Stock

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Andel Nordic

Denmark . 116 parts In-Stock

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$0.090

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Kulean Microsystems

USA . 1,988 parts In-Stock

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SupplyDigital Components

Austria . 1,964 parts In-Stock

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Corphita

USA . 1,932 parts In-Stock

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Problanco Electronics

Mexico . 455 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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TANS Electronics

Latvia . 148 parts In-Stock

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Corohmni

South Africa . 138 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NGTD13R120F2WP diode. Designed for fast recovery applications, this rectifier diode offers unrivaled performance and efficiency. With a maximum reverse current of 1 uA and a maximum repetitive peak reverse voltage of 1200 V, this diode is perfect for high-power applications. The surface mount configuration makes installation a breeze, while the compact rectangular package ensures compatibility with a wide range of devices. Trust in Onsemi to deliver unparalleled value and benefits with the NGTD13R120F2WP diode.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and reduces component count, making it easier to work with.

Surface Mount: YES

Surface mount capability allows for easy and secure attachment to circuit boards, saving space and improving overall circuit layout.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and improved efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy handling and placement during assembly.

Package Style (Meter): UNCASED CHIP

Uncased chip package style provides compact size and better heat dissipation, improving overall performance.

Application: FAST RECOVERY

Fast recovery diodes are ideal for high-speed switching applications, offering quick response times and reduced switching losses.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Terminal Position: UPPER

Upper terminal position simplifies connections and ensures proper orientation during installation.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making them essential components in power supply circuits.

Maximum Forward Voltage (VF): 2.6 V

Low forward voltage drop ensures minimal power dissipation and efficient energy conversion.

Terminal Form: NO LEAD

No lead terminal form simplifies soldering and connection processes, ensuring secure and reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High repetitive peak reverse voltage rating makes this diode suitable for high-voltage applications, providing robust protection against reverse polarity.

Diode Element Material: SILICON

Silicon diodes offer high reliability, low leakage current, and excellent temperature stability, making them suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NGTD13R120F2WP attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JESD-30 Code:

R-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD13R120F2WP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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