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NGTD9R120F2WP

Onsemi

NGTD9R120F2WP by Onsemi

The Onsemi NGTD9R120F2WP is a single rectifier diode with a max repetitive peak reverse voltage of 1200V. It has a fast recovery application and operates at temperatures up to 175 °C. This surface-mount diode has a max forward voltage of 2.6V, making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 585 parts In-Stock

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Digiode

USA . 104 parts In-Stock

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Kulean Microsystems

USA . 7,297 parts In-Stock

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SupplyDigital Components

Austria . 6,980 parts In-Stock

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TANS Electronics

Latvia . 4,470 parts In-Stock

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Problanco Electronics

Mexico . 2,312 parts In-Stock

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Corphita

USA . 1,836 parts In-Stock

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Corohmni

South Africa . 154 parts In-Stock

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Overview

Discover the NGTD9R120F2WP by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in the industry, this diode is perfect for fast recovery applications. With a maximum reverse current of 1uA and a maximum forward voltage of 2.6V, this diode ensures superior efficiency and precision. Whether you're in the automotive, industrial, or consumer electronics sector, this diode will provide the value and benefits you need to take your products to the next level. Experience the difference with Onsemi's NGTD9R120F2WP.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to use and install in various electronic circuits.

Surface Mount: YES

Surface mount capability allows for simple and efficient mounting on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 1 uA

Low reverse current ensures efficient performance and minimal power loss in the circuit.

Package Shape: SQUARE

Square package shape provides stability and ease of handling during installation.

Package Style (Meter): UNCASED CHIP

Uncased chip design offers flexibility in applications and enables direct integration into various electronic devices.

Application: FAST RECOVERY

Fast recovery diode design ensures quick response times, making it suitable for high-speed circuits and applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for usage in a wide variety of environments and conditions.

Terminal Position: UPPER

Upper terminal position enables easy connection and integration within circuits and systems.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 2.6 V

Low forward voltage drop ensures minimal power loss and energy efficiency in the circuit.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and reduces the risk of short circuits or damage during assembly.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage rating makes it suitable for high-voltage applications and circuits.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance, durability, and stability in various operating conditions.

Technical Specifications

Diodes & Rectifiers NGTD9R120F2WP attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD9R120F2WP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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