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NGTD15R65F2WP

Onsemi

NGTD15R65F2WP by Onsemi

NGTD15R65F2WP by Onsemi is a single rectifier diode with 650V peak reverse voltage and 1uA max reverse current. Its fast recovery makes it ideal for high-temperature applications up to 175 °C. This surface-mount chip has a square package style, making it suitable for various electronic designs.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 33,000 parts In-Stock

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AZTECH Wire

Italy . 334 parts In-Stock

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Component Stockers USA

USA . 648 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,933 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,413 parts In-Stock

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Kulean Microsystems

USA . 7,084 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 1,570 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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SupplyDigital Components

Austria . 462 parts In-Stock

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Overview

Discover the NGTD15R65F2WP by Onsemi, a high-quality rectifier diode that offers fast recovery and reliable performance. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a wide range of applications. With a maximum reverse current of 1 uA and a maximum operating temperature of 175 °C, this diode provides exceptional value and benefits to customers. Whether you're looking for a surface mount diode for your electronics project or need a reliable component for your industrial application, the NGTD15R65F2WP delivers superior performance and efficiency.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Surface mount design allows for easy installation and saves space on the circuit board.

Maximum Reverse Current: 1 uA

Low reverse current ensures efficient operation and minimizes power loss.

Package Shape: SQUARE

Square package shape provides stability and easy handling during installation.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers simplicity and flexibility for integration into various applications.

Application: FAST RECOVERY

Fast recovery diode is ideal for high-speed circuits where rapid switching is required.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environments.

Terminal Position: UPPER

Upper terminal position facilitates easy connections and reduces the risk of short circuits.

Diode Type: RECTIFIER DIODE

Rectifier diode is suitable for converting AC to DC power with low forward voltage drop.

Maximum Forward Voltage (VF): 2.9 V

Low forward voltage ensures minimal power loss and efficient energy conversion.

Terminal Form: NO LEAD

No-lead terminal form simplifies the installation process and reduces the risk of errors.

Maximum Repetitive Peak Reverse Voltage: 650 V

High repetitive peak reverse voltage ensures the diode can withstand voltage spikes and surges.

Diode Element Material: SILICON

Silicon diode element material offers good thermal conductivity and high operating temperature range.

Technical Specifications

Diodes & Rectifiers NGTD15R65F2WP attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.9 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD15R65F2WP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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