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NGTD17R120F2SWK

Onsemi

NGTD17R120F2SWK by Onsemi

The Onsemi NGTD17R120F2SWK is a single diode with fast recovery, ideal for high voltage applications. It features a max reverse current of 1uA, forward voltage of 1.8V, and repetitive peak reverse voltage of 1200V. This surface-mount diode operates up to 175 °C and is designed in a square package style for uncased chip configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 64,000 parts In-Stock

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Vyrian

USA . 4,993 parts In-Stock

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Digiode

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Ampacity Inc.

Singapore . 1,506 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 87 parts In-Stock

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$19.430

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Problanco Electronics

Mexico . 6,516 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 4,898 parts In-Stock

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Kulean Microsystems

USA . 2,583 parts In-Stock

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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SupplyDigital Components

Austria . 465 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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Corphita

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Overview

Discover the NGTD17R120F2SWK by Onsemi, a high-quality rectifier diode that offers fast recovery and a maximum repetitive peak reverse voltage of 1200V. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a variety of applications. With its surface mount capability and compact square package shape, this diode is easy to install and versatile. Experience the benefits of low reverse current, efficient operation, and reliability with the NGTD17R120F2SWK. Upgrade your projects with this superior diode today!

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it simple and easy to use in various applications.

Surface Mount: YES

Being surface mountable allows for easy and secure mounting on PCBs.

Maximum Reverse Current: 1 uA

Low maximum reverse current ensures efficiency and minimizes power loss.

Package Shape: SQUARE

Square package shape enables compact and space-saving design implementation.

Package Style: UNCASED CHIP

Uncased chip style provides flexibility in various mounting and packaging options.

Application: FAST RECOVERY

Fast recovery diode suitable for applications requiring quick response times.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in harsh environments.

Terminal Position: UPPER

Upper terminal position facilitates easy connections in circuit designs.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC with low forward voltage drop.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop of 1.8V minimizes power dissipation and energy loss.

Terminal Form: NO LEAD

No lead terminal form reduces assembly complexity and potential points of failure.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage of 1200V for use in high voltage applications.

Diode Element Material: SILICON

Silicon diode element material provides reliable performance and longevity.

Technical Specifications

Diodes & Rectifiers NGTD17R120F2SWK attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

1 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NGTD17R120F2SWK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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