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NDS8435A

Onsemi

NDS8435A by Onsemi

NDS8435A by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 7.9A Drain Current, 0.023 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 2.5W and can withstand temperatures up to 150°C.

Median Price

$1.100

Lifecycle Status

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25

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1k+

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Rochester

USA . 126,265 parts In-Stock

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$1.060

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$0.880

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$0.784

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$1.060

$0.880

$0.784

DigiKey

USA . 126,265 parts In-Stock

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$1.330

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Verical

USA . 87,452 parts In-Stock

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$0.981

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$0.981

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Freelance Electronics

USA . 1,300 parts In-Stock

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$0.187

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$0.196

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$0.185

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$0.187

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Digiode

USA . 1,337 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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DigiKey Marketplace

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Vyrian

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Prism Electronics

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Bristol Electronics

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Electronic Expediters

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Elcom Components

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Inventory MP

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PC Components Company LLC

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Sea View Technologies

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Lighthouse Electronics, Inc.

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Inland Empire Components Inc.

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Anansix

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Quantum Digital Technology

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North Shore Components

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Corohmni

South Africa . 165 parts In-Stock

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$0.187

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Ampacity Inc.

Singapore . 72,507 parts In-Stock

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$0.493

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Corphita

USA . 1,638 parts In-Stock

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Continental Prestige Electronics

USA . 6,389 parts In-Stock

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$0.807

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Argo Parts USA

USA . 3,090 parts In-Stock

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Metaverse IC Inc.

Canada . 58,600 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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SupplyDigital Components

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Kulean Microsystems

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Netroflash

USA . 2,000 parts In-Stock

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$0.782

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Authorized Procurement Solutions

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UHIMA Technologies

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GreenTree Electronics

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Overview

Unleash the power of innovation with the NDS8435A by Onsemi, a cutting-edge Small Signal Field Effect Transistor that offers unmatched quality and reliability. Manufactured by industry leader Onsemi, this P-Channel transistor is designed for switching applications, providing seamless performance and efficiency. With a high drain current capacity and low on-resistance, the NDS8435A delivers exceptional value and benefits to customers looking for premium electronic components. Elevate your projects with the precision and excellence of Onsemi's NDS8435A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower leakage current and higher mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Surface Mount: YES

Surface mounting allows for easy PCB assembly and space-saving design.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, this transistor can handle higher voltages safely.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure good electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage to turn on, offering better control in switching applications.

Maximum Drain Current (Abs) (ID): 7.9 A

High drain current capability allows for handling higher loads and currents without overheating.

No. of Terminals: 8

8 terminals provide multiple connection points for versatile circuit configurations.

Maximum Power Dissipation (Abs): 2.5 W

With a high power dissipation capability, this transistor can handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption for better performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without failing.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its reliability, efficiency, and ease of manufacturing.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures a reliable electrical connection.

Maximum Drain-Source On Resistance: 0.023 ohm

Low drain-source on resistance results in minimal power loss and improves overall efficiency.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in various circuit layouts.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand the high temperatures of the reflow soldering process.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS8435A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.9 A

Maximum Drain Current (ID):

7.9 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS8435A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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