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NDS8434

Onsemi

NDS8434 by Onsemi

NDS8434 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 6.5A max drain current, and 0.035 ohm max on resistance. With small outline package style and operating temp up to 150°C, it's suitable for surface mount designs requiring high power dissipation.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 1,241 parts In-Stock

1+ parts

$1.200

100+ parts

$0.809

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$0.584

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$0.572

1,241

$1.200

$0.809

$0.584

$0.572

Element14

Singapore . 1,116 parts In-Stock

1+ parts

$2.360

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$1.600

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$1.150

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$1.130

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$1.130

Flip Electronics (Authorized)

USA . 5,167 parts In-Stock

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Rochester

USA . 179 parts In-Stock

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$0.925

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$0.768

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$0.685

179

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$0.768

$0.685

Distributors (In-Stock)

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DF Sales Co.

USA . 1,138 parts In-Stock

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DF Sales Co.

USA . 1,138 parts In-Stock

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Digiode

USA . 1,240 parts In-Stock

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Component Electronics Inc.

Canada . 9 parts In-Stock

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$1.540

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$1.150

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Vyrian

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Semtec, LLC

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Semi Source

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Chip Stock

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Anansix

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Odintec Ltd.

Israel . 2,096 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Component Sense

UK . 1,119 parts In-Stock

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Sea View Technologies

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Bristol Electronics

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Sensible Micro Corp

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ComSIT Distribution GmbH

Germany . 390 parts In-Stock

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Prism Electronics

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Electronics Depot

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Nova Conductors

Japan . 200 parts In-Stock

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LWI Electronics Inc

India . 140 parts In-Stock

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Amalfi Trading

USA . 59 parts In-Stock

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NPI Materials, Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 122 parts In-Stock

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$0.400

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Ampacity Inc.

Singapore . 6,832 parts In-Stock

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$0.650

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Semicontronic

India . 6,398 parts In-Stock

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$0.650

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$0.634

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$0.630

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Corphita

USA . 2,663 parts In-Stock

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$0.683

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Component Stockers USA

USA . 12,210 parts In-Stock

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$0.780

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$0.530

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$0.670

10k+ parts

$0.670

12,210

$0.780

$0.530

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$0.670

Aztec Data Supply Inc.

USA . 3,417 parts In-Stock

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$1.706

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

USA . 16,229 parts In-Stock

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Perfect Parts

USA . 11,960 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Problanco Electronics

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Assy Fe

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Computer Components Inc. - USA

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Cyclops Electronics Ltd (Excess)

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Aranea Global

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SupplyDigital Components

Austria . 986 parts In-Stock

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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Argo Parts USA

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iodParts Technologies Inc.

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Kepictronics

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TANS Electronics

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Overview

Experience the superior performance and reliability of the NDS8434 by Onsemi, a top-of-the-line P-CHANNEL Small Signal Field Effect Transistor with a built-in diode. Perfect for switching applications, this high-quality transistor offers customers unmatched value and benefits. With a maximum drain current of 6.5 A and a low on-resistance of 0.035 ohm, this transistor ensures efficient operation. Trust in Onsemi's expertise in semiconductor technology and elevate your projects with the NDS8434.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for various switching applications and offers different characteristics compared to N-Channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient feature for certain applications that require a diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy mounting on circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 20 V

A sufficient breakdown voltage for many common applications, ensuring safe operation.

Maximum Drain Current (Abs) (ID): 6.5 A

High current handling capability allows the transistor to handle demanding loads without overheating.

Maximum Power Dissipation (Abs): 1 W

Efficient power handling capability, suitable for a wide range of applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology, known for high switching speeds and low power consumption.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS8434 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

6.5 A

Maximum Drain Current (ID):

6.5 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS8434 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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