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NCV33161DR2

Onsemi

NCV33161DR2 by Onsemi

NCV33161DR2 by Onsemi is a Power Management IC with 8 terminals, operating at -40 to 125 °C. It supports a supply voltage range of 2-40 V and has a max supply current of 0.7 mA. Ideal for automotive applications due to its small outline package style and bipolar technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,946 parts In-Stock

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Digiode

USA . 624 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 1,420 parts In-Stock

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$4.500

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AZTECH Wire

Italy . 714 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,400 parts In-Stock

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SupplyDigital Components

Austria . 7,478 parts In-Stock

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Kulean Microsystems

USA . 7,439 parts In-Stock

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Microchip USA

USA . 4,997 parts In-Stock

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Problanco Electronics

Mexico . 3,179 parts In-Stock

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TANS Electronics

Latvia . 1,919 parts In-Stock

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Corphita

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Vigor

Singapore . 370 parts In-Stock

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UHIMA Technologies

Türkiye . 161 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Aranea Global

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Overview

Enhance your power management system with the NCV33161DR2 by Onsemi. Crafted with precision and quality, this Power Management IC offers unparalleled performance and reliability. Ideal for automotive applications, this small outline package delivers a nominal supply voltage of 5V with dual terminals for seamless integration. Trust in Onsemi's expertise to provide you with the cutting-edge technology you need to optimize your power supplies. Upgrade to the NCV33161DR2 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability of the product.

Nominal Supply Voltage (Vsup): 5 V

The nominal supply voltage of 5V allows for compatibility with a wide range of applications.

Power Supplies (V): 5

With 5 power supplies available, this product can efficiently manage power distribution in multiple channels.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the product can withstand demanding operating conditions.

Technology: BIPOLAR

The use of bipolar technology allows for efficient and precise power management, making this product a reliable choice.

Technical Specifications

Power Management ICs NCV33161DR2 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

MINIMUM SUPPLY NEEDED FOR NEGATIVE SENSING IS 4V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.7 mA

Maximum Supply Voltage (Vsup):

40 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NCV33161DR2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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