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TPS3838K33DBVRG4

Texas Instruments

TPS3838K33DBVRG4 by Texas Instruments

TPS3838K33DBVRG4 by Texas Instruments is a power management IC with a nominal voltage of 1.8V and a min operating temperature of -40°C. It is commonly used as a power supply support circuit in industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 17,070 parts In-Stock

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17,070

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Vyrian

USA . 6,418 parts In-Stock

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6,418

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Digiode

USA . 4,199 parts In-Stock

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Nova Conductors

Japan . 40 parts In-Stock

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40

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Ampacity Inc.

Singapore . 1,540 parts In-Stock

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$2.500

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1,540

$2.500

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Corohmni

South Africa . 129 parts In-Stock

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$2.584

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129

$2.584

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Semicontronic

India . 851 parts In-Stock

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$3.500

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$3.412

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$3.395

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851

$3.500

$3.412

$3.395

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One Stop Electronics

USA . 322 parts In-Stock

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$7.500

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322

$7.500

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Parana Technologies

USA . 98 parts In-Stock

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$7.763

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$8.305

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98

$7.763

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DigiPath Technology Company

USA . 2,245 parts In-Stock

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$8.548

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$7.864

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$8.548

$7.864

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ChromeModa Solutions

Germany . 6,848 parts In-Stock

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$8.722

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$7.152

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$8.722

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IDEA Electronic Components Group

UK . 1,705 parts In-Stock

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$8.722

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$8.286

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$7.850

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$8.722

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$7.850

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AZTECH Wire

Italy . 427 parts In-Stock

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$9.184

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427

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$12.247

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$11.634

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$11.634

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$12.247

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$11.634

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Perfect Parts

USA . 13,972 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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Argo Parts USA

USA . 4,487 parts In-Stock

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Kepictronics

USA . 3,200 parts In-Stock

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Continental Prestige Electronics

USA . 3,032 parts In-Stock

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Corphita

USA . 2,555 parts In-Stock

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Microchip USA

USA . 2,161 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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900

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Experience the exceptional quality of Texas Instruments with the TPS3838K33DBVRG4 Power Management IC. Designed to provide unparalleled performance, this small outline, low profile package delivers reliable power supply support in a wide range of applications. With its advanced CMOS technology and industrial-grade temperature grade, this IC ensures maximum efficiency even in demanding environments. Benefit from its compact size, dual terminal position, and surface mount capabilities, making it easy to integrate into your designs. Trust in the value and advantages that Texas Instruments brings to every product, and unlock endless possibilities for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the Power Management IC.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation of the Power Management IC onto a PCB, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.8 V

The low nominal supply voltage of 1.8V makes this Power Management IC suitable for applications where lower power consumption is desired.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this Power Management IC can reliably operate in a wide range of environmental conditions.

Technology: CMOS

Utilizing CMOS technology ensures efficient power management and low power consumption, making this IC an energy-efficient choice.

Technical Specifications

Power Management ICs TPS3838K33DBVRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.93V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.6 mm

Trade Compliance

TPS3838K33DBVRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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