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NCV301LSN30T1G

Onsemi

NCV301LSN30T1G by Onsemi

NCV301LSN30T1G by Onsemi is a Power Management IC with 5 terminals, operating at -40 °C to 260°C. It has a nominal voltage of 1.5V and supports power supply circuits with a max seated height of 1.1mm. This CMOS technology IC is AEC-Q100 compliant and suitable for automotive applications due to its small outline package style and dual terminal position.

Median Price

$0.244

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.211

10k+ parts

$0.188

72,000

-

$0.254

$0.211

$0.188

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.235

54,000

-

-

-

$0.235

Distributors (In-Stock)

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Digiode

USA . 1,299 parts In-Stock

1+ parts

$0.198

100+ parts

-

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-

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1,299

$0.198

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Flip Electronics

USA . 20,354 parts In-Stock

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-

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20,354

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-

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Vyrian

USA . 5,940 parts In-Stock

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-

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5,940

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Distributors (Availability)

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Corphita

USA . 586 parts In-Stock

1+ parts

$0.187

100+ parts

-

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586

$0.187

-

-

-

Corohmni

South Africa . 473 parts In-Stock

1+ parts

$0.208

100+ parts

-

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473

$0.208

-

-

-

Vigor

Singapore . 276 parts In-Stock

1+ parts

$0.910

100+ parts

-

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-

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276

$0.910

-

-

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AZTECH Wire

Italy . 1,025 parts In-Stock

1+ parts

$17.860

100+ parts

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1,025

$17.860

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Perfect Parts

USA . 114,204 parts In-Stock

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114,204

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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Problanco Electronics

Mexico . 6,559 parts In-Stock

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6,559

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SupplyDigital Components

Austria . 6,117 parts In-Stock

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6,117

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Kulean Microsystems

USA . 2,114 parts In-Stock

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2,114

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TANS Electronics

Latvia . 1,618 parts In-Stock

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1,618

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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770

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Futuretech Components

Singapore . 675 parts In-Stock

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675

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Microchip USA

USA . 242 parts In-Stock

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242

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Overview

Enhance your power management solutions with the NCV301LSN30T1G by Onsemi. Manufactured with top-quality materials and AEC-Q100 screening, this power management IC offers reliability and durability for various applications. With a small outline, thin profile package style, this product is easy to integrate into your designs. Experience the benefits of a nominal supply voltage of 1.5V, low supply current of 0.0013mA, and a wide temperature range from -40 °C to 260°C. Trust Onsemi for cutting-edge technology and superior performance in power supply support circuits. Choose the NCV301LSN30T1G and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the integrated circuit, ensuring reliability in various operating conditions.

Surface Mount: YES

Makes it easy to mount on circuit boards, saving space and simplifying the assembly process.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability, making it suitable for automotive applications.

Nominal Supply Voltage (Vsup): 1.5 V

Optimal supply voltage for consistent and efficient performance in power management applications.

No. of Terminals: 5

Provides necessary connections for power input, output, and control signals in a compact layout.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Enables space-efficient design and integration into compact electronic devices.

Minimum Operating Temperature: -40 °C

Suitable for use in harsh environments and ensures operation in extreme temperature conditions.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity, ensuring secure connections and efficient power distribution.

Technology: CMOS

Utilizes low power consumption and high noise immunity, ideal for power management applications.

Maximum Supply Voltage (Vsup): 10 V

Allows for a wide range of input voltages, giving flexibility in power supply options.

Technical Specifications

Power Management ICs NCV301LSN30T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCV301LSN30T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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