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NCV300LSN28T1G

Onsemi

NCV300LSN28T1G by Onsemi

NCV300LSN28T1G by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 °C to 125°C. This CMOS technology IC has a matte tin finish and peak reflow temperature of 260°C.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 498 parts In-Stock

1+ parts

$0.350

100+ parts

$0.184

1k+ parts

$0.155

10k+ parts

$0.140

498

$0.350

$0.184

$0.155

$0.140

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 846 parts In-Stock

1+ parts

$0.418

100+ parts

-

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846

$0.418

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Vyrian

USA . 6,041 parts In-Stock

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6,041

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Distributors (Availability)

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Vigor

Singapore . 184 parts In-Stock

1+ parts

$0.250

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184

$0.250

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Corphita

USA . 1,654 parts In-Stock

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$0.396

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1,654

$0.396

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Corohmni

South Africa . 200 parts In-Stock

1+ parts

$0.440

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200

$0.440

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Component Stockers USA

USA . 21,723 parts In-Stock

1+ parts

$2.320

100+ parts

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21,723

$2.320

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$24.778

100+ parts

$22.548

1k+ parts

$20.318

10k+ parts

-

750

$24.778

$22.548

$20.318

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iodParts Technologies Inc.

India . 102,000 parts In-Stock

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102,000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 19,753 parts In-Stock

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19,753

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TANS Electronics

Latvia . 8,017 parts In-Stock

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8,017

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Kepictronics

USA . 7,000 parts In-Stock

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7,000

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Microchip USA

USA . 6,427 parts In-Stock

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6,427

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Problanco Electronics

Mexico . 4,295 parts In-Stock

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4,295

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Kulean Microsystems

USA . 3,626 parts In-Stock

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3,626

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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SupplyDigital Components

Austria . 3,290 parts In-Stock

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3,290

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UHIMA Technologies

Türkiye . 127 parts In-Stock

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127

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Overview

Discover the NCV300LSN28T1G by Onsemi, a top-tier Power Management IC designed with precision and quality in mind. With a focus on reliability and performance, Onsemi delivers cutting-edge technology that exceeds industry standards. Ideal for automotive applications, this compact and versatile IC offers a wide range of benefits, including efficient power management and reliable circuit support. Experience the value and advantage of choosing Onsemi for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good thermal resistance and protection for the components inside, making the product durable and reliable.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration of the product onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 1.5 V

Operating at a nominal supply voltage of 1.5V ensures efficient power management and performance while also being compatible with a wide range of devices.

Power Supplies (V): 0.8/10

Supporting a wide range of power supplies from 0.8V to 10V makes this product versatile and suitable for various applications and power sources.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, enhancing the efficiency of the power management IC.

Technical Specifications

Power Management ICs NCV300LSN28T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.8V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCV300LSN28T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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