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NCP802SAN6T1G

Onsemi

NCP802SAN6T1G by Onsemi

NCP802SAN6T1G by Onsemi is a Power Management IC with 3V nominal voltage, suitable for industrial applications. It features 6 terminals, dual terminal position, and operates b/w -40 to 85 °C. With a small outline package style and very thin profile, it supports power supplies of 1.5-5V efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,331 parts In-Stock

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2,331

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Digiode

USA . 1,334 parts In-Stock

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1,334

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,825 parts In-Stock

1+ parts

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7,825

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Kulean Microsystems

USA . 7,580 parts In-Stock

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7,580

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Corphita

USA . 2,415 parts In-Stock

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2,415

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TANS Electronics

Latvia . 1,326 parts In-Stock

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1,326

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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578

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SupplyDigital Components

Austria . 98 parts In-Stock

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98

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Corohmni

South Africa . 95 parts In-Stock

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95

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Overview

Enhance the efficiency of your power management system with the NCP802SAN6T1G by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for a wide range of applications, this product is designed to optimize performance and ensure seamless operation. Trust Onsemi's reputation for excellence and choose the NCP802SAN6T1G for superior power supply support. Experience the benefits of advanced technology and elevate your system to new heights with this innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components of the Power Management IC.

Surface Mount: YES

Being surface mount compatible allows for easy installation on PCBs, making the integration process more efficient.

Nominal Supply Voltage (Vsup): 3 V

The 3V nominal supply voltage ensures compatibility with a wide range of electronic devices, making it versatile and practical for different applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this Power Management IC can withstand and perform reliably in various environmental conditions.

Terminal Position: DUAL

Having dual terminal positions enhances connectivity and flexibility in circuit design, allowing for more versatile and customized applications.

Width (mm): 1.6 mm

The compact width of 1.6mm makes this Power Management IC suitable for space-constrained designs where size is a critical factor.

Minimum Supply Voltage (Vsup): 1.5 V

The low minimum supply voltage of 1.5V enables this Power Management IC to operate efficiently in low-power applications, reducing energy consumption.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density mounting on PCBs, enabling more components to be placed in a limited space.

Technical Specifications

Power Management ICs NCP802SAN6T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e2

Length:

2.6 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.1,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.5/5

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.006 mA

Maximum Supply Voltage (Vsup):

5 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN SILVER

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

1.6 mm

Trade Compliance

NCP802SAN6T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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