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NCP802SN1T1

Onsemi

NCP802SN1T1 by Onsemi

NCP802SN1T1 by Onsemi is a Power Management IC with 6 terminals, operating voltage range of 1.5V to 5V, and industrial temperature grade. It is a surface-mount device in a small outline package suitable for power supply support circuits in various applications. With a max seated height of 1.45mm and peak reflow temperature of 235 °C, it offers reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,991 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,830 parts In-Stock

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Digiode

USA . 590 parts In-Stock

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590

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AZTECH Wire

Italy . 405 parts In-Stock

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$13.670

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405

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Microchip USA

USA . 6,051 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,031 parts In-Stock

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Kulean Microsystems

USA . 4,212 parts In-Stock

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Kepictronics

USA . 3,330 parts In-Stock

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Corphita

USA . 2,359 parts In-Stock

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SupplyDigital Components

Austria . 936 parts In-Stock

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UHIMA Technologies

Türkiye . 916 parts In-Stock

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TANS Electronics

Latvia . 875 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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Vigor

Singapore . 127 parts In-Stock

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Overview

Enhance your power management solutions with the NCP802SN1T1 by Onsemi. Crafted with precision and reliability, this Power Management IC offers unparalleled performance for a wide range of applications. With a focus on quality and innovation, Onsemi ensures that their products meet the highest standards in the industry. From industrial to consumer electronics, the NCP802SN1T1 delivers exceptional value and efficiency, making it the perfect choice for your power management needs. Elevate your projects with Onsemi and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material offers good protection and durability for the IC, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and enabling automated assembly processes.

Nominal Supply Voltage (Vsup): 3 V

Operates efficiently at 3V, making it compatible with a wide range of electronic devices and power sources.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting to different components and circuits, allowing for versatile applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this IC can function reliably in demanding industrial environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures that the IC can withstand extreme cold conditions without performance issues.

Maximum Supply Current (Isup): 0.006 mA

Low maximum supply current of 0.006mA helps in efficient power management and reduces energy consumption.

Terminal Pitch: 0.95 mm

A small terminal pitch of 0.95mm allows for close spacing on the PCB, enabling compact designs and saving valuable board space.

Technical Specifications

Power Management ICs NCP802SN1T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Length:

2.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

1.5/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.006 mA

Maximum Supply Voltage (Vsup):

5 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width (mm):

1.625 mm

Trade Compliance

NCP802SN1T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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