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NCP803SN263T1

Onsemi

NCP803SN263T1 by Onsemi

NCP803SN263T1 by Onsemi is a Power Management IC with 3.3V nominal voltage, suitable for industrial applications. It features a small outline package, tin lead terminal finish, and operates b/w -40 to 105 °C. Ideal for power supply support circuits in compact designs requiring low supply current.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 18,500 parts In-Stock

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R&J Components

USA . 9,000 parts In-Stock

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Vyrian

USA . 4,861 parts In-Stock

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Electronic Expediters

USA . 2,785 parts In-Stock

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Inventory MP

USA . 2,573 parts In-Stock

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Bristol Electronics

USA . 2,573 parts In-Stock

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Digiode

USA . 1,517 parts In-Stock

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Vigor

Singapore . 540 parts In-Stock

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$0.430

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AZTECH Wire

Italy . 1,161 parts In-Stock

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$10.940

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Component Stockers USA

USA . 295 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 20,184 parts In-Stock

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Kulean Microsystems

USA . 8,004 parts In-Stock

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Problanco Electronics

Mexico . 7,956 parts In-Stock

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SupplyDigital Components

Austria . 7,199 parts In-Stock

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TANS Electronics

Latvia . 5,952 parts In-Stock

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Corphita

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Corohmni

South Africa . 362 parts In-Stock

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UHIMA Technologies

Türkiye . 147 parts In-Stock

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Overview

Elevate your power management game with the NCP803SN263T1 by Onsemi. As a leader in Power Management ICs, Onsemi delivers top-notch quality and reliability. This compact yet powerful IC is perfect for various applications, providing a nominal supply voltage of 3.3V and a wide temperature range. With a small outline and dual terminal position, this IC offers easy installation and exceptional performance. Trust Onsemi to provide cutting-edge technology that meets your power supply needs efficiently and effectively. Elevate your projects with the NCP803SN263T1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IC, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 3.3 V

Operates at a common voltage level, making it compatible with a wide range of systems and devices.

No. of Terminals: 3

Simplifies the connection process and reduces the chance of wiring errors.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, ideal for industrial applications where heat may be a concern.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments, offering versatility in deployment scenarios.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability for reliable connections.

Minimum Supply Voltage (Vsup): 1.2 V

Operates at a low voltage level, suitable for devices with power constraints or efficiency requirements.

Technical Specifications

Power Management ICs NCP803SN263T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.63V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Length:

2.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

1.5/5

Qualification:

Not Qualified

Maximum Seated Height:

1.11 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0025 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.63V

Width (mm):

1.3 mm

Trade Compliance

NCP803SN263T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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