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NCP392DRFCCT1G

Onsemi

NCP392DRFCCT1G by Onsemi

NCP392DRFCCT1G by Onsemi is a Power Management IC with 12 terminals, operating at -40 to 85 °C. It has a supply voltage range of 2.8V to 28V and adjustable threshold feature. This IC is ideal for industrial applications requiring precise power supply support circuits in compact form factors.

Median Price

$0.566

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 93,708 parts In-Stock

1+ parts

-

100+ parts

$0.555

1k+ parts

$0.461

10k+ parts

$0.411

93,708

-

$0.555

$0.461

$0.411

Verical

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.576

10k+ parts

$0.513

72,000

-

-

$0.576

$0.513

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,700 parts In-Stock

1+ parts

$0.432

100+ parts

-

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1,700

$0.432

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-

-

Vyrian

USA . 8,475 parts In-Stock

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8,475

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 281 parts In-Stock

1+ parts

$0.410

100+ parts

-

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281

$0.410

-

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Vigor

Singapore . 182 parts In-Stock

1+ parts

$0.440

100+ parts

-

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182

$0.440

-

-

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Corohmni

South Africa . 284 parts In-Stock

1+ parts

$0.455

100+ parts

-

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284

$0.455

-

-

-

AZTECH Wire

Italy . 853 parts In-Stock

1+ parts

$8.190

100+ parts

-

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853

$8.190

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Continental Prestige Electronics

USA . 93,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.401

10k+ parts

-

93,700

-

-

$0.401

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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TANS Electronics

Latvia . 4,190 parts In-Stock

1+ parts

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4,190

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SupplyDigital Components

Austria . 3,813 parts In-Stock

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3,813

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Kulean Microsystems

USA . 2,711 parts In-Stock

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2,711

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Problanco Electronics

Mexico . 2,581 parts In-Stock

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2,581

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Kepictronics

USA . 2,151 parts In-Stock

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2,151

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UHIMA Technologies

Türkiye . 599 parts In-Stock

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599

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Microchip USA

USA . 226 parts In-Stock

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226

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Overview

Enhance your power management capabilities with the NCP392DRFCCT1G by Onsemi. Designed with precision and reliability in mind, this Power Management IC offers unparalleled performance for a wide range of applications. Whether you're looking to optimize energy efficiency or ensure stable power supply support, this product delivers. With Onsemi's reputation for quality and innovation, you can trust that you're getting a top-of-the-line solution for all your power management needs. Experience the difference with the NCP392DRFCCT1G - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the internal components of the IC and is commonly used in electronic devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient soldering onto a PCB, saving space and making the product suitable for compact designs.

Nominal Supply Voltage (Vsup): 5 V

The nominal supply voltage of 5V is a common and widely used standard in many electronic systems.

No. of Terminals: 12

Having 12 terminals allows for multiple connections and flexibility in connecting to other components in a circuit.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can operate well even in high temperature environments.

Minimum Operating Temperature: -40 °C

The wide temperature range of -40 °C to 85°C ensures reliable operation in a variety of different environmental conditions.

Width (mm): 1.285 mm

The small width of 1.285mm makes this IC suitable for applications where space is limited.

Minimum Supply Voltage (Vsup): 2.8 V

The minimum supply voltage of 2.8V ensures that the IC can still operate efficiently even when the power supply voltage is low.

Technical Specifications

Power Management ICs NCP392DRFCCT1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PBGA-B12

Length:

2.025 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.6 mm

Maximum Supply Voltage (Vsup):

28 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

1.285 mm

Trade Compliance

NCP392DRFCCT1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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