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NCP367OPMUEATBG

Onsemi

NCP367OPMUEATBG by Onsemi

NCP367OPMUEATBG by Onsemi is a Power Management IC with 3.5V nominal voltage, suitable for industrial applications. It features a small outline package style, surface mount capability, and an adjustable threshold. With a wide operating temperature range of -40 to 85 °C, it is ideal for power supply support circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,159 parts In-Stock

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Digiode

USA . 732 parts In-Stock

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AZTECH Wire

Italy . 725 parts In-Stock

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$12.690

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725

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SupplyDigital Components

Austria . 7,103 parts In-Stock

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Problanco Electronics

Mexico . 2,166 parts In-Stock

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Kulean Microsystems

USA . 1,785 parts In-Stock

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TANS Electronics

Latvia . 1,332 parts In-Stock

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Corphita

USA . 590 parts In-Stock

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Microchip USA

USA . 479 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Corohmni

South Africa . 118 parts In-Stock

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Overview

Enhance your power management solutions with the NCP367OPMUEATBG by Onsemi. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for a variety of applications, this product provides customers with seamless power supply support circuitry in a compact and efficient package. Say goodbye to power disruptions and hello to optimized performance with the NCP367OPMUEATBG. Unlock the potential of your devices with this cutting-edge solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

Being surface mount compatible allows for easy installation on PCBs, saving space and making the overall design more compact.

Nominal Supply Voltage (Vsup): 3.5 V

The nominal supply voltage of 3.5V ensures compatibility with a wide range of devices and applications requiring this level of power.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style allows for efficient heat dissipation and space-saving in the overall design.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliability in demanding industrial environments where temperature fluctuations may occur.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for operation in cold climates or during temperature variations without compromising performance.

Maximum Seated Height: 1 mm

The low seated height of 1mm makes it suitable for applications where space is limited and compact design is required.

Width (mm): 2 mm

The narrow width of 2mm contributes to a compact form factor and allows for flexibility in design layout.

Minimum Supply Voltage (Vsup): 1.2 V

The minimum supply voltage of 1.2V ensures compatibility with low-power devices and applications where energy efficiency is essential.

Maximum Supply Current (Isup): 0.13 mA

The low maximum supply current of 0.13mA indicates energy-efficient operation and minimal power consumption, making it suitable for battery-powered devices.

Technical Specifications

Power Management ICs NCP367OPMUEATBG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

2.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.13 mA

Maximum Supply Voltage (Vsup):

28 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

3.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

NCP367OPMUEATBG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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