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NCP304HSQ30T1

Onsemi

NCP304HSQ30T1 by Onsemi

NCP304HSQ30T1 by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for industrial applications. It features a small outline package style, dual terminal position, and CMOS technology. With a temperature range of -40 °C to 85°C, it is ideal for power supply support circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,947 parts In-Stock

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Digiode

USA . 1,414 parts In-Stock

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1,414

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AZTECH Wire

Italy . 275 parts In-Stock

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$19.760

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275

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Problanco Electronics

Mexico . 8,394 parts In-Stock

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TANS Electronics

Latvia . 6,108 parts In-Stock

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SupplyDigital Components

Austria . 4,265 parts In-Stock

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Kulean Microsystems

USA . 1,821 parts In-Stock

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Corphita

USA . 655 parts In-Stock

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655

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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547

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Vigor

Singapore . 360 parts In-Stock

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Microchip USA

USA . 337 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Experience the exceptional quality and reliability of the NCP304HSQ30T1 by Onsemi, a leading manufacturer in the Power Management ICs category. This power supply support circuit offers unmatched value with its wide range of applications and high-performance capabilities. From industrial settings to consumer electronics, this compact and efficient IC provides optimal power management solutions. Trust Onsemi for cutting-edge technology and superior products that deliver unparalleled benefits to customers worldwide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the Power Management IC, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount capability allows for easy and secure installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V ensures efficient and stable power delivery to the device, enhancing performance and reliability.

Power Supplies (V): 0.8/10

The wide range of power supply options from 0.8V to 10V allows flexibility in powering various components and devices, making it versatile for different applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this Power Management IC can withstand harsh environmental conditions and extended use without overheating.

Technology: CMOS

The CMOS technology used in this IC offers low power consumption, high speed, and compatibility with a wide range of applications, making it an efficient and versatile choice.

Technical Specifications

Power Management ICs NCP304HSQ30T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Length:

2 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP4,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0036 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.3 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3V

Width (mm):

1.25 mm

Trade Compliance

NCP304HSQ30T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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