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NCP303LSN38T1G

Onsemi

NCP303LSN38T1G by Onsemi

NCP303LSN38T1G by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 °C to 125°C. The CMOS technology supports power supply circuits with a nominal threshold voltage of +3.8V.

Median Price

$1.190

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,790 parts In-Stock

1+ parts

$2.140

100+ parts

$0.596

1k+ parts

$0.401

10k+ parts

-

2,790

$2.140

$0.596

$0.401

-

Rochester

USA . 2,232 parts In-Stock

1+ parts

-

100+ parts

$0.241

1k+ parts

$0.200

10k+ parts

$0.178

2,232

-

$0.241

$0.200

$0.178

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 634 parts In-Stock

1+ parts

$0.188

100+ parts

-

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634

$0.188

-

-

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Vyrian

USA . 7,307 parts In-Stock

1+ parts

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7,307

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ComSIT Distribution GmbH

Germany . 2,450 parts In-Stock

1+ parts

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2,450

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ComSIT USA

USA . 2,450 parts In-Stock

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2,450

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,966 parts In-Stock

1+ parts

$0.168

100+ parts

-

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-

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3,966

$0.168

-

-

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Corphita

USA . 911 parts In-Stock

1+ parts

$0.178

100+ parts

-

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911

$0.178

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Corohmni

South Africa . 51 parts In-Stock

1+ parts

$0.198

100+ parts

-

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51

$0.198

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Vigor

Singapore . 723 parts In-Stock

1+ parts

$0.590

100+ parts

-

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723

$0.590

-

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$7.539

100+ parts

$6.860

1k+ parts

$6.182

10k+ parts

-

2,000

$7.539

$6.860

$6.182

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AZTECH Wire

Italy . 641 parts In-Stock

1+ parts

$19.330

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641

$19.330

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Perfect Parts

USA . 28,935 parts In-Stock

1+ parts

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28,935

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SupplyDigital Components

Austria . 7,267 parts In-Stock

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7,267

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TANS Electronics

Latvia . 7,264 parts In-Stock

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7,264

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Kepictronics

USA . 7,000 parts In-Stock

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7,000

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Problanco Electronics

Mexico . 3,588 parts In-Stock

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3,588

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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GreenTree Electronics

Israel . 2,790 parts In-Stock

1+ parts

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2,790

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Kulean Microsystems

USA . 1,251 parts In-Stock

1+ parts

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1,251

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UHIMA Technologies

Türkiye . 394 parts In-Stock

1+ parts

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394

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Microchip USA

USA . 288 parts In-Stock

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288

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Overview

Discover the NCP303LSN38T1G by Onsemi, a cutting-edge Power Management IC that guarantees superior quality and performance. Manufactured by industry leader Onsemi, this device is designed to deliver exceptional power supply support for a wide range of applications, making it a versatile and reliable choice for your projects. With its advanced technology and automotive-grade temperature grade, the NCP303LSN38T1G offers unmatched value, efficiency, and precision, ensuring optimal operation in any environment. Upgrade your power management systems with this innovative solution from Onsemi and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.5 V

Optimal supply voltage ensuring stable performance and efficiency.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall efficiency.

Technical Specifications

Power Management ICs NCP303LSN38T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.8V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN38T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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