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NCP301LSN27T1

Onsemi

NCP301LSN27T1 by Onsemi

NCP301LSN27T1 by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V threshold of +2.7V. It is used in automotive applications for power supply support circuits due to its small outline package and wide operating temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

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7

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1k+

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Chip Stock

USA . 328,000 parts In-Stock

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NexGen Digital

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Digiode

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Huijzer Components

Netherlands . 75 parts In-Stock

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Vigor

Singapore . 550 parts In-Stock

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$0.190

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AZTECH Wire

Italy . 281 parts In-Stock

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$15.130

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$29.192

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$26.565

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$23.937

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 6,007 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

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Microchip USA

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Overview

Discover the NCP301LSN27T1 by Onsemi and experience the power of high-quality Power Management ICs. With a focus on innovation and reliability, Onsemi is a leading manufacturer in the industry, providing cutting-edge solutions for various applications. Whether you're looking to optimize power supplies or enhance performance, this product offers unmatched value, benefits, and advantages for customers seeking top-notch technology. Upgrade your systems with ease and efficiency - choose Onsemi for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the power management IC easy to handle and affordable.

Surface Mount: YES

Allows for easier and more efficient assembly onto circuit boards, saving time and effort during the manufacturing process.

Nominal Supply Voltage (Vsup): 1.5 V

Provides a stable supply voltage for the device, ensuring consistent performance and reliability.

No. of Terminals: 5

Simplified interface with other components in the system, reducing complexity and potential points of failure.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various applications where heat may be a concern.

Technology: CMOS

Complementary metal-oxide-semiconductor technology offers low power consumption and high noise immunity, improving efficiency and performance.

Technical Specifications

Power Management ICs NCP301LSN27T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.7V

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.7/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN27T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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