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NCP301LSN10T1G

Onsemi

NCP301LSN10T1G by Onsemi

NCP301LSN10T1G by Onsemi is a Power Management IC with Vsup ranging from 0.65V to 10V. It has a small outline, thin profile package style and operates b/w -40 °C to 85°C. Ideal for power supply support circuits in industrial applications due to its compact size and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,443 parts In-Stock

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Digiode

USA . 2,264 parts In-Stock

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Vigor

Singapore . 185 parts In-Stock

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$0.210

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185

$0.210

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AZTECH Wire

Italy . 1,004 parts In-Stock

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$20.190

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TANS Electronics

Latvia . 8,091 parts In-Stock

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Problanco Electronics

Mexico . 7,497 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,558 parts In-Stock

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Kulean Microsystems

USA . 5,435 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,889 parts In-Stock

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Corphita

USA . 1,833 parts In-Stock

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UHIMA Technologies

Türkiye . 918 parts In-Stock

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Corohmni

South Africa . 254 parts In-Stock

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Microchip USA

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Overview

Discover the NCP301LSN10T1G by Onsemi, a top-of-the-line Power Management IC designed to provide reliable and efficient performance. With Onsemi's reputation for quality and innovation in the industry, this product offers customers unparalleled value and benefits. Ideal for various applications, this IC ensures optimal power supply support while maintaining industrial-grade durability. Experience peace of mind knowing you have a trusted solution that delivers consistent performance in a compact and sleek package. Choose the NCP301LSN10T1G and elevate your power management capabilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material helps in keeping the overall weight of the IC low, making it suitable for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly on PCBs, saving time and cost during manufacturing.

Nominal Supply Voltage (Vsup): 0.7 V

The low nominal supply voltage of 0.7V makes this IC energy-efficient, contributing to overall power savings in the system.

No. of Terminals: 5

Having 5 terminals provides enough connectivity options for various power management functions, making the IC versatile and suitable for different applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this IC can withstand high temperature environments, ensuring reliable performance in harsh conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, enhancing the overall durability and reliability of the IC.

Width (mm): 1.5 mm

The compact width of 1.5mm makes this IC suitable for space-constrained applications where size is a critical factor.

Minimum Supply Voltage (Vsup): 0.65 V

The low minimum supply voltage requirement of 0.65V enables the IC to operate efficiently even with low input power sources, expanding its range of applications.

Temperature Grade: INDUSTRIAL

Being designed for industrial temperature ranges, this IC is highly reliable and capable of withstanding challenging operating conditions in industrial environments.

Technical Specifications

Power Management ICs NCP301LSN10T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTOR THRESHOLD VOLTAGE IS 1V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.65 V

Nominal Supply Voltage (Vsup):

.7 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN10T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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