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NCP301LSN09T1

Onsemi

NCP301LSN09T1 by Onsemi

NCP301LSN09T1 by Onsemi is a Power Management IC with Vsup ranging from 0.7V to 10V, suitable for industrial applications. It features a small outline package with dual terminals and operates b/w -40 °C to 85°C. The CMOS technology IC has a low supply current of 0.0012mA and peak reflow temperature of 235°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,563 parts In-Stock

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Digiode

USA . 669 parts In-Stock

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AZTECH Wire

Italy . 108 parts In-Stock

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$20.410

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RC Electronics

USA . 40,000 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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TANS Electronics

Latvia . 7,551 parts In-Stock

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SupplyDigital Components

Austria . 5,595 parts In-Stock

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Problanco Electronics

Mexico . 4,107 parts In-Stock

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Kulean Microsystems

USA . 2,437 parts In-Stock

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Corphita

USA . 1,140 parts In-Stock

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Microchip USA

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Vigor

Singapore . 319 parts In-Stock

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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Corohmni

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Overview

Enhance your power management capabilities with the NCP301LSN09T1 by Onsemi. Designed with precision and reliability in mind, this Power Management IC offers a wide range of applications for various industries. With Onsemi's reputation for high-quality products, you can trust that this device will provide optimal performance and efficiency. From its compact package style to its advanced technology, this IC delivers value and benefits that will exceed your expectations. Upgrade your power supply support circuit today with the NCP301LSN09T1 and experience the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, making it suitable for a variety of applications.

Surface Mount: YES

Ease of installation and space-saving design for efficient PCB layout.

Nominal Supply Voltage (Vsup): 0.85 V

Optimal operating voltage for the IC, ensuring stable performance.

No. of Terminals: 5

Simplified connectivity for the device, making it user-friendly for integration.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperature environments, enhancing versatility.

Width (mm): 1.5 mm

Compact size for space-constrained applications, enabling versatile usage.

Maximum Supply Voltage (Vsup): 10 V

High supply voltage tolerance for robust performance and versatility.

Technical Specifications

Power Management ICs NCP301LSN09T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 0.9V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.7/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

.85 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+0.9V

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN09T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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