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MZP4745ARLG

Onsemi

MZP4745ARLG by Onsemi

The Onsemi MZP4745ARLG is a Zener diode with 16V nominal reference voltage, 15.5mA test current, and 5% voltage tolerance. It operates at up to 200 °C, has a max power dissipation of 3W, and a dynamic impedance of 16 ohm. Ideal for applications requiring precise voltage regulation in high-temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,275 parts In-Stock

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Digiode

USA . 1,548 parts In-Stock

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AZTECH Wire

Italy . 639 parts In-Stock

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SupplyDigital Components

Austria . 7,576 parts In-Stock

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Kulean Microsystems

USA . 7,021 parts In-Stock

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Problanco Electronics

Mexico . 6,708 parts In-Stock

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TANS Electronics

Latvia . 3,928 parts In-Stock

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Corphita

USA . 1,937 parts In-Stock

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Corohmni

South Africa . 406 parts In-Stock

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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Overview

Discover the power of precision with the MZP4745ARLG Zener Diode by Onsemi. As a leader in semiconductor manufacturing, Onsemi guarantees top-notch quality and reliability in all their products. The MZP4745ARLG is perfect for a wide range of applications, providing stable voltage regulation and protection against voltage spikes. With its high performance and efficiency, this Zener diode offers unmatched value and benefits to customers looking for a reliable solution to their electronic circuit needs. Experience the difference with Onsemi's MZP4745ARLG Zener Diode today!

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and makes it easier to use in various applications.

Working Test Current: 15.5 mA

Operating at a low test current of 15.5 mA helps in saving power and improving efficiency.

Maximum Voltage Tolerance: 5 %

Having a tight voltage tolerance of 5% ensures consistent and reliable performance in different circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this zener diode can withstand high temperatures without malfunctioning.

Maximum Dynamic Impedance: 16 ohm

Low dynamic impedance of 16 ohm helps in maintaining stable voltage regulation in the circuit.

Terminal Finish: TIN

Terminal finish with TIN coating provides good conductivity and solderability for easy installation.

Maximum Power Dissipation: 3 W

High power dissipation capability of 3 W allows the zener diode to handle high power loads without overheating.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures that the zener diode can withstand the high temperatures during soldering process.

Diode Type: ZENER DIODE

Being a zener diode, it provides stable voltage regulation and protection against voltage spikes in the circuit.

Nominal Reference Voltage: 16 V

Nominal reference voltage of 16 V ensures precise voltage regulation in the circuit, making it suitable for various applications.

Technical Specifications

Zener Diodes MZP4745ARLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

16 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

3 W

Nominal Reference Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

15.5 mA

Trade Compliance

MZP4745ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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