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MMQA6V2T3G

Onsemi

MMQA6V2T3G by Onsemi

MMQA6V2T3G by Onsemi is a transient suppression device with 4 common anode elements. It has a max power dissipation of 150W and breakdown voltage of 6.2V, making it ideal for protecting electronic circuits from voltage spikes in applications such as automotive electronics and industrial equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 75,000 parts In-Stock

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Vyrian

USA . 9,292 parts In-Stock

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Digiode

USA . 1,399 parts In-Stock

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AZTECH Wire

Italy . 266 parts In-Stock

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$17.460

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Component Stockers USA

USA . 438 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,371 parts In-Stock

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Problanco Electronics

Mexico . 6,813 parts In-Stock

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Kulean Microsystems

USA . 3,783 parts In-Stock

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Corphita

USA . 2,152 parts In-Stock

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UHIMA Technologies

Türkiye . 224 parts In-Stock

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TANS Electronics

Latvia . 205 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Overview

Discover the MMQA6V2T3G by Onsemi, a high-quality Transient Suppression Device that offers superior protection and peace of mind. With a common anode configuration and four elements, this product is designed to safeguard your electronics from voltage spikes. Whether you're in need of surge protection for telecommunications equipment, industrial machinery, or automotive applications, this device has you covered. Trust in Onsemi's reputation for reliability and innovation, and experience the value and benefits that the MMQA6V2T3G brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and resistance to heat, making the product suitable for various applications.

Configuration: COMMON ANODE, 4 ELEMENTS

Common anode configuration with 4 elements allows for efficient transient suppression of voltage spikes in electronic circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High peak reverse power dissipation capability ensures reliable protection against transient overvoltages in the circuit.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2 V ensures effective transient voltage suppression at the specified voltage levels.

Maximum Reverse Current: 0.7 uA

Low reverse current ensures minimal leakage and power loss during normal operation of the device.

Surface Mount: YES

Surface mount capability makes installation and integration of the device easier in compact electronic designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the device to withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

Wide operating temperature range from -55 to 150 °C ensures reliable operation in various environmental conditions.

Maximum Clamping Voltage: 9 V

The maximum clamping voltage of 9 V provides effective suppression of voltage transients and protects downstream components from damage.

Technical Specifications

Transient Suppression Devices MMQA6V2T3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6.51 V

Minimum Breakdown Voltage:

5.89 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

9 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

4 V

Maximum Reverse Current:

.7 uA

Reverse Test Voltage:

4 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MMQA6V2T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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