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MICRORB-10010-MLP-TR-E

Onsemi

MICRORB-10010-MLP-TR-E by Onsemi

MICRORB-10010-MLP-TR-E by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor, peak wavelength of 1050nm, and size of 0.01mm. Ideal for surface mount applications in optoelectronics, it operates b/w -40 °C to 85°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,511 parts In-Stock

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Vyrian

USA . 1,218 parts In-Stock

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Kulean Microsystems

USA . 7,856 parts In-Stock

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Problanco Electronics

Mexico . 2,025 parts In-Stock

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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SupplyDigital Components

Austria . 737 parts In-Stock

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Corphita

USA . 301 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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TANS Electronics

Latvia . 20 parts In-Stock

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Overview

Unleash the power of cutting-edge optoelectronics with the MICRORB-10010-MLP-TR-E by Onsemi. Crafted with precision and expertise, this avalanche photodiode offers unparalleled performance in a compact 0.01 mm size. Whether used in medical devices, optical communication systems, or industrial sensors, this single with built-in resistor configuration delivers reliable results. Elevate your projects with the quality and innovation that only Onsemi can provide. Experience enhanced efficiency, accuracy, and value with the MICRORB-10010-MLP-TR-E - the perfect solution for all your optoelectronic needs.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Size: 0.01 mm

Small size allows for compact device design and integration into tight spaces.

Peak Wavelength (nm): 1050

Optimal peak wavelength for specific applications requiring high sensitivity at this range.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and fast response times, making them ideal for low-light detection applications.

No. of Terminals: 4

More terminals allow for versatile connectivity options and increased functionality in the circuit.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliability in a variety of environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures consistent performance even in extreme cold environments.

Packing Method: TR

TR packing method provides good protection during shipping and handling, reducing the risk of damage.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies assembly process and allows for easy integration into electronic devices.

Technical Specifications

Other Function Optoelectronics MICRORB-10010-MLP-TR-E attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Shape:

RECTANGULAR

Size:

.01 mm

Trade Compliance

MICRORB-10010-MLP-TR-E Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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