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MICRORB-10035-MLP-TR

Onsemi

MICRORB-10035-MLP-TR by Onsemi

MICRORB-10035-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It has a peak wavelength of 1050nm, max response time of 0.9ns, and operates b/w -40 to 85 °C. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.

Median Price

$23.480

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 254,610 parts In-Stock

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USA . 254,610 parts In-Stock

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Flip Electronics

USA . 254,610 parts In-Stock

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Vyrian

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Digiode

USA . 2,183 parts In-Stock

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AZTECH Wire

Italy . 654 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 6,540 parts In-Stock

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TANS Electronics

Latvia . 4,767 parts In-Stock

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Kulean Microsystems

USA . 3,213 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 2,094 parts In-Stock

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Corphita

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Corohmni

South Africa . 278 parts In-Stock

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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Problanco Electronics

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Overview

Experience superior quality and performance with the MICRORB-10035-MLP-TR by Onsemi! This innovative product from a trusted manufacturer offers unmatched reliability and precision in optoelectronics. Ideal for a wide range of applications, this avalanche photodiode boasts a built-in resistor and fast response time, making it the perfect choice for your next project. Elevate your designs with the cutting-edge technology and exceptional value that only Onsemi can deliver.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space, making this product easy to integrate into various applications.

Size: 0.035 mm

The compact size of 0.035mm makes this optoelectronic component suitable for applications where space is limited.

Peak Wavelength (nm): 1050

The peak wavelength of 1050nm indicates the sensitivity of this avalanche photodiode to a specific range of light, making it ideal for targeted applications.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making them suitable for high-speed and low-light detection applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this optoelectronic component can withstand relatively high temperatures, increasing its versatility in different environments.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C ensures reliable performance even in cold environments, making this component suitable for a wide range of applications.

Maximum Dark Current: 1500 nA

The low maximum dark current of 1500nA indicates minimal leakage current when the photodiode is not illuminated, leading to enhanced signal-to-noise ratio in detection applications.

Packing Method: TR

The TR packing method ensures secure packaging and protection during transportation and handling, preserving the integrity of the component.

Maximum Response Time: 0.0000000009 s

The ultra-fast maximum response time of 0.9 nanoseconds enables rapid detection and processing of light signals, making this component suitable for high-speed applications.

Semiconductor Material: Silicon

Silicon is a common and reliable semiconductor material known for its high performance and compatibility with various electronic systems, enhancing the overall quality and reliability of this optoelectronic component.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation on PCBs, facilitating efficient assembly and maintenance processes in electronic devices.

Technical Specifications

Other Function Optoelectronics MICRORB-10035-MLP-TR attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Maximum Dark Current:

1500 nA

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Maximum Response Time:

.0000000009 s

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

.035 mm

Trade Compliance

MICRORB-10035-MLP-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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