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MICRORB-10010-MLP-TR

Onsemi

MICRORB-10010-MLP-TR by Onsemi

MICRORB-10010-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C and has a peak wavelength of 1050 nm. Ideal for surface mount applications, it boasts a fast response time of 0.0000000015 s.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 9,846 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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Digiode

USA . 1,742 parts In-Stock

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AZTECH Wire

Italy . 1,071 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 7,836 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,302 parts In-Stock

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GreenTree Electronics

Israel . 2,965 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Corohmni

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Overview

Discover the MICRORB-10010-MLP-TR by Onsemi, a top-quality optoelectronic component that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this avalanche photodiode with built-in resistor is perfect for a variety of applications. From precision sensing to communication systems, this product provides exceptional value and benefits to customers. With a compact size and fast response time, the MICRORB-10010-MLP-TR delivers consistent results in extreme temperatures, making it the ideal choice for your next project. Elevate your design with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and reduces the overall component count, making it easier to integrate into systems.

Size: 0.01 mm

The compact size allows for easy placement and integration into small devices or systems with limited space.

Peak Wavelength (nm): 1050

The specific wavelength allows for precise detection of light in the 1050nm range, providing accurate results in optoelectronic applications.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity, low noise, and fast response times, making them ideal for applications requiring high performance detection.

No. of Terminals: 4

Having 4 terminals allows for more flexible connections and potential functions, enhancing the versatility of the optoelectronic component.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this component can withstand harsh environmental conditions and maintain optimal performance.

Shape: RECTANGULAR

The rectangular shape provides a standardized form factor, making it easy to mount and integrate into various systems and devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold environments, enhancing the component's usability in a wide range of applications.

Maximum Dark Current: 520 nA

The low dark current minimizes noise and ensures accurate detection of light signals, making this optoelectronic component suitable for precision applications.

Packing Method: TR

The TR packing method provides protection during shipment and storage, ensuring the component arrives in optimal condition for installation and use.

Maximum Response Time: 0.0000000015 s

The extremely fast response time allows for real-time detection and rapid signal processing, making this component ideal for high-speed applications.

Semiconductor Material: Silicon

Silicon is a widely used semiconductor material known for its reliability and performance, ensuring the optoelectronic component's long-term stability and functionality.

Mounting Feature: SURFACE MOUNT

The surface mount capability simplifies the installation process and allows for easy placement onto circuit boards or other surfaces, improving overall assembly efficiency.

Technical Specifications

Other Function Optoelectronics MICRORB-10010-MLP-TR attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Maximum Dark Current:

520 nA

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Maximum Response Time:

.0000000015 s

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

.01 mm

Trade Compliance

MICRORB-10010-MLP-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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