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MICRORB-10010-MLP-TR1

Onsemi

MICRORB-10010-MLP-TR1 by Onsemi

MICRORB-10010-MLP-TR1 by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It has a peak wavelength of 1050nm, response time of 0.0000000015s, and operates b/w -40 to 85 °C. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.

Median Price

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Lifecycle Status

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AZTECH Wire

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TANS Electronics

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Overview

Enhance your optoelectronic projects with the MICRORB-10010-MLP-TR1 by Onsemi. This high-quality avalanche photodiode offers superior performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for a wide range of applications, this product provides exceptional value with its built-in resistor and fast response time. Trust Onsemi to deliver top-notch optoelectronics that meet your needs and exceed your expectations.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and ensures proper operation without the need for additional components.

Peak Wavelength (nm): 1050

The specific peak wavelength of 1050 nm is suitable for various applications including telecommunications and remote sensing.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making them ideal for low-light detection applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this product can withstand harsh environmental conditions and long-term operation.

Minimum Operating Temperature: -40 °C

The wide operating temperature range from -40 °C to 85°C allows for reliable performance in both extreme cold and hot conditions.

Maximum Dark Current: 520 nA

The low maximum dark current of 520 nA ensures accurate and reliable signal detection in low-light conditions.

Maximum Response Time: 0.0000000015 s

The ultra-fast response time of 0.0000000015 seconds enables rapid detection and processing of optical signals.

Semiconductor Material: Silicon

Silicon is a widely used semiconductor material known for its high efficiency and reliability in optoelectronic applications.

Mounting Feature: SURFACE MOUNT

The surface mount design simplifies the installation process and allows for space-saving integration into compact electronic systems.

Technical Specifications

Other Function Optoelectronics MICRORB-10010-MLP-TR1 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Maximum Dark Current:

520 nA

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Maximum Response Time:

.0000000015 s

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

.01 mm

Trade Compliance

MICRORB-10010-MLP-TR1 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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