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MICRORB-10035-MLP-TR1

Onsemi

MICRORB-10035-MLP-TR1 by Onsemi

MICRORB-10035-MLP-TR1 by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C, with peak wavelength of 1050 nm. Ideal for surface mount applications due to its small size of 0.035 mm and fast response time of 0.0000000009 s.

Median Price

$47.580

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,735 parts In-Stock

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$47.580

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Flip Electronics (Authorized)

USA . 4,735 parts In-Stock

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Vyrian

USA . 13,154 parts In-Stock

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USA . 4,735 parts In-Stock

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4,735

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Digiode

USA . 484 parts In-Stock

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AZTECH Wire

Italy . 1,116 parts In-Stock

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$16.910

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Problanco Electronics

Mexico . 7,663 parts In-Stock

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TANS Electronics

Latvia . 6,670 parts In-Stock

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Kulean Microsystems

USA . 3,213 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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SupplyDigital Components

Austria . 442 parts In-Stock

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Corohmni

South Africa . 415 parts In-Stock

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Perfect Parts

USA . 276 parts In-Stock

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UHIMA Technologies

Türkiye . 180 parts In-Stock

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Corphita

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Overview

Discover the cutting-edge MICRORB-10035-MLP-TR1 by Onsemi, a top-tier manufacturer known for superior quality and innovation. This avalanche photodiode with a built-in resistor offers unparalleled performance in various optoelectronic applications. From its compact size to its rapid response time, this product delivers exceptional value and reliability. Trust Onsemi to provide you with the best in optoelectronics, and experience the difference in quality and functionality with the MICRORB-10035-MLP-TR1.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the design and integration process, making this product easy to use in various applications.

Size: 0.035 mm

The compact size of this optoelectronic component allows for flexibility in placement and saves space in applications where size is a constraint.

Peak Wavelength (nm): 1050

The peak wavelength of 1050 nm makes this product suitable for applications that require detection or transmission of light in this specific wavelength range.

Optoelectronic Type: AVALANCHE PHOTODIODE

The use of an avalanche photodiode provides high sensitivity and low noise performance, making this product ideal for applications that require reliable and precise optical measurements.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can perform efficiently in environments with elevated temperatures without compromising its performance.

Shape: RECTANGULAR

The rectangular shape of this optoelectronic component allows for easy integration and alignment in various systems and devices.

Minimum Operating Temperature: -40 °C

The wide operating temperature range from -40 °C to 85°C ensures that this product can function reliably in both low and high-temperature environments.

Maximum Dark Current: 1500 nA

The low maximum dark current of 1500 nA ensures minimal signal interference in low-light conditions, making this product suitable for light-sensitive applications.

Packing Method: TR

The TR packing method provides protection during transportation and storage, ensuring the product arrives in optimal condition for use.

Maximum Response Time: 0.0000000009 s

The ultra-fast maximum response time of 0.0000000009 seconds allows for quick detection and reaction to changes in light levels, making this product ideal for high-speed applications.

Semiconductor Material: Silicon

The silicon semiconductor material used in this product offers high sensitivity and reliability, making it a popular choice for optoelectronic applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for easy replacement or upgrading of components in electronic systems.

Technical Specifications

Other Function Optoelectronics MICRORB-10035-MLP-TR1 attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Maximum Dark Current:

1500 nA

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Maximum Response Time:

.0000000009 s

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

.035 mm

Trade Compliance

MICRORB-10035-MLP-TR1 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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