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MICRORB-10020-MLP-TR

Onsemi

MICRORB-10020-MLP-TR by Onsemi

MICRORB-10020-MLP-TR by Onsemi is a SINGLE AVALANCHE PHOTODIODE with built-in resistor. It operates b/w -40 to 85 °C and has a peak wavelength of 1050 nm. Ideal for surface mount applications, it boasts a fast response time of 0.000000001 s.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 51,000 parts In-Stock

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USA . 51,000 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 220 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 6,973 parts In-Stock

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Kulean Microsystems

USA . 3,078 parts In-Stock

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GreenTree Electronics

Israel . 2,821 parts In-Stock

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SupplyDigital Components

Austria . 2,627 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,228 parts In-Stock

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UHIMA Technologies

Türkiye . 332 parts In-Stock

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South Africa . 279 parts In-Stock

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Overview

Discover the cutting-edge MICRORB-10020-MLP-TR by Onsemi, a game-changer in the world of optoelectronics. With its high-quality manufacturing and innovative design, this avalanche photodiode offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with value, benefits, and advantages that set it apart from the competition. Experience the difference with the MICRORB-10020-MLP-TR and elevate your projects to new heights.

Feature Benefit Bullets

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the design and integration process, making this product easy to use.

Size: 0.02 mm

The compact size of the optoelectronic component allows for space-saving designs in applications where size is a critical factor.

Peak Wavelength (nm): 1050

The peak wavelength of 1050 nm enables this product to be used in various applications that require specific wavelength ranges.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and fast response times, making them ideal for applications where high performance is crucial.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the reliability and durability of this product in challenging environmental conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40 to 85 °C allows this product to function effectively in both high and low-temperature environments.

Maximum Dark Current: 540 nA

The low maximum dark current of 540 nA indicates minimal noise and higher signal-to-noise ratios, enhancing the performance of this optoelectronic component.

Packing Method: TR

The TR packing method ensures that the product is securely packaged and protected during shipping, reducing the risk of damage during transit.

Maximum Response Time: 0.000000001 s

The ultra-fast response time of 0.000000001 seconds makes this product suitable for high-speed applications where rapid detection and measurement are essential.

Semiconductor Material: Silicon

Silicon-based optoelectronic components offer excellent performance and reliability, making this product a dependable choice for various applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for easy integration into circuit boards and electronic devices.

Technical Specifications

Other Function Optoelectronics MICRORB-10020-MLP-TR attributes and parameters. Explore more Other Function Optoelectronics devices from Onsemi

Specs

Configuration:

SINGLE WITH BUILT-IN RESISTOR

Maximum Dark Current:

540 nA

Mounting Feature:

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

1050

Maximum Response Time:

.000000001 s

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

.02 mm

Trade Compliance

MICRORB-10020-MLP-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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