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MICROFR-10035-MLP-GP

Onsemi

MICROFR-10035-MLP-GP by Onsemi

MICROFR-10035-MLP-GP by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 81nA. Ideal for surface mount applications in optoelectronics due to its compact size and high sensitivity.

Median Price

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1k+

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Digiode

USA . 699 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 8,213 parts In-Stock

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Kulean Microsystems

USA . 3,728 parts In-Stock

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Problanco Electronics

Mexico . 2,396 parts In-Stock

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Corphita

USA . 1,132 parts In-Stock

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SupplyDigital Components

Austria . 885 parts In-Stock

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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Overview

Experience superior quality and performance with the MICROFR-10035-MLP-GP photodiode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and reliability. Ideal for a variety of applications, this avalanche photodiode offers exceptional value and benefits to customers. With a peak wavelength of 635nm and maximum operating temperature of 85 °C, this square-shaped photodiode is perfect for surface mount applications. Trust Onsemi to provide you with top-of-the-line optoelectronic components that exceed your expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the setup and reduces the complexity of the overall system.

Size: 1 mm

Compact size allows for easy integration into various applications where space is limited.

Peak Wavelength (nm): 635

Peak wavelength of 635nm makes it suitable for applications requiring detection in the red spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode type provides high sensitivity and low noise, making it ideal for low light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in diverse environmental conditions.

Minimum Reverse Breakdown Voltage: 24.25 V

High reverse breakdown voltage ensures robustness and protection against voltage spikes.

Shape: SQUARE

Square shape allows for easier alignment and integration in the system.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables operation in extreme cold environments.

Maximum Dark Current: 81 nA

Low dark current ensures accurate measurements by minimizing unwanted noise.

Packing Method: GEL PACK

Gel pack packing method provides protection during transportation and storage, ensuring the product's integrity.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies the installation process and allows for secure mounting on the circuit board.

Technical Specifications

Photodiodes MICROFR-10035-MLP-GP attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

81 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

GEL PACK

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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