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MICROFR-10020-MLP-GP

Onsemi

MICROFR-10020-MLP-GP by Onsemi

MICROFR-10020-MLP-GP by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 25nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 4,996 parts In-Stock

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Kulean Microsystems

USA . 3,828 parts In-Stock

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Corphita

USA . 2,158 parts In-Stock

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TANS Electronics

Latvia . 1,697 parts In-Stock

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SupplyDigital Components

Austria . 1,053 parts In-Stock

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UHIMA Technologies

Türkiye . 804 parts In-Stock

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Corohmni

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Overview

Experience superior quality and performance with the MICROFR-10020-MLP-GP photodiode by Onsemi. This cutting-edge avalanche photodiode offers unmatched precision for a wide range of applications, from medical devices to industrial equipment. With a peak wavelength of 635 nm and a minimum reverse breakdown voltage of 24.25 V, this square-shaped photodiode delivers reliable results in any environment. Trust in Onsemi's expertise and innovation to provide you with the value and benefits you need to stay ahead in your industry.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes this photodiode easy to use and integrate into various applications.

Size: 1 mm

Compact size allows for easy placement and incorporation into small devices or systems.

Peak Wavelength (nm): 635

Peak wavelength of 635nm enables precise detection and measurement in the red part of the spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode technology provides high sensitivity and low noise characteristics, ideal for low-light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in a wide range of environments.

Minimum Reverse Breakdown Voltage: 24.25 V

Minimum reverse breakdown voltage of 24.25V ensures protection against voltage surges and overloads.

Shape: SQUARE

Square shape simplifies the mounting process and provides a uniform detection area.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C allows for operation in cold environments without performance degradation.

Maximum Dark Current: 25 nA

Low maximum dark current of 25nA ensures accuracy and reliability in low-light conditions.

Packing Method: GEL PACK

Gel pack packaging provides protection during shipping and handling, reducing the risk of damage to the photodiode.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and allows for secure attachment to circuit boards or other surfaces.

Technical Specifications

Photodiodes MICROFR-10020-MLP-GP attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

GEL PACK

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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